Hyang-Ja Yang
According to our database1,
Hyang-Ja Yang
authored at least 10 papers
between 2008 and 2016.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2016
IEEE J. Solid State Circuits, 2016
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2011
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction.
IEEE J. Solid State Circuits, 2011
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010
2008
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008