Xiaopeng Yu
Orcid: 0000-0002-4531-6645Affiliations:
- Zhejiang University, Institute of VLSI Design, School of Integrated Circuits, Hangzhou, China
- Nanyang Technological University (NTU), School of Electrical and Electronic Engineering, Singapore (PhD 2006)
According to our database1,
Xiaopeng Yu
authored at least 53 papers
between 2005 and 2025.
Collaborative distances:
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Bibliography
2025
A Sub-1 V 90 dB-SNDR Power/BW Scalable DTDSM Using Low-Voltage Cascoded Floating Inverter Amplifiers in 130 nm CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap., May, 2025
A 0.8-V BJT-Based Temperature Sensor With an Inaccuracy of ±0.4 °C (3σ) From -40 °C to 125 °C in 22-nm CMOS.
IEEE J. Solid State Circuits, April, 2025
Int. J. Circuit Theory Appl., 2025
Evolution of and Perspectives on Differential-Pair-Based CMOS Variable Gain Amplifiers With Linear-in-Decibel Gain Control: A Tutorial.
Int. J. Circuit Theory Appl., 2025
27.3 A Sub-1V 14b 5.8nW/Hz BW/Power-Scalable CT Sensor Interface with a Frequency-Controlled Current Source Achieving a 225× Scalable Range.
Proceedings of the IEEE International Solid-State Circuits Conference, 2025
An Event-Driven Load Regulation Enhanced LDO IC with 9.2fs-Transient-FoM and 1.6µA-Quiescent Current for Low Voltage IoT Applications.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025
2024
IEEE Trans. Circuits Syst. II Express Briefs, December, 2024
IEEE J. Solid State Circuits, December, 2024
A Two-Step Time-to-Digital Converter With 5.6-ps Resolution and 1-4255-μs Measurement Range.
IEEE Trans. Circuits Syst. II Express Briefs, February, 2024
A Sub-1μW 16-Bit Fully Dynamic Zoom ADC Compatible With Free-Running and Incremental Modes Using Residue Feedforward and Extended Counting Techniques.
IEEE Trans. Circuits Syst. II Express Briefs, February, 2024
A 6 ppm/°C capacitively-biased diode based novel bandgap circuit with driving capability and calibration.
Microelectron. J., 2024
A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C (3σ) from -40°C to 125°C in 22nm CMOS.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
3.4 A 14b 98Hz-to-5.9kHz 1.7-to-50.8 μ W BW/Power Scalable Sensor Interface with a Dynamic Bandgap Reference and an Untrimmed Gain Error of ± 0.26 % from -40°C to 125°C.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
A 2.1/5.2-NEF/PEF Capacitively Coupled Instrumentation Amplifier with Fast - Settling for Biosensor.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024
2023
A Fully Dynamic 4-Channel 13b Simultaneous Sampling Incremental ΔΣ ADC Using Cascoded Floating-Inverter-Amplifier and Code Division Multiplexing Technique.
IEEE Trans. Circuits Syst. II Express Briefs, October, 2023
A Linear-in-Decibel Automatic Gain Control Amplifier With Dual Mode Continuous Gain Tuning.
IEEE Trans. Circuits Syst. I Regul. Pap., July, 2023
J. Circuits Syst. Comput., June, 2023
IEEE J. Solid State Circuits, 2023
2022
IEEE Trans. Circuits Syst. II Express Briefs, 2022
An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from -50 to 150 °C.
Sensors, 2022
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
Predicting the Output Structure of Sparse Matrix Multiplication with Sampled Compression Ratio.
Proceedings of the 28th IEEE International Conference on Parallel and Distributed Systems, 2022
2021
A BJT-Based CMOS Temperature Sensor With Duty-Cycle-Modulated Output and ±0.5°C (3σ) Inaccuracy From -40 °C to 125 °C.
IEEE Trans. Circuits Syst. II Express Briefs, 2021
A digital background calibration scheme for non-linearity of SAR ADC using back-propagation algorithm.
Microelectron. J., 2021
Broadband linearity enhancement method for a 1.3 GHz-2.5 GHz digitally-assisted oscillator in a 55-nm CMOS technology.
Microelectron. J., 2021
A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pJ•K<sup>2</sup> in 55nm CMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2021
2020
A Dynamic-Biased Resistor-Based CMOS Temperature Sensor With a Duty-Cycle-Modulated Output.
IEEE Trans. Circuits Syst. II Express Briefs, 2020
Microelectron. J., 2020
A 1770-µm<sup>2</sup> Leakage-Based Digital Temperature Sensor With Supply Sensitivity Suppression in 55-nm CMOS.
IEEE J. Solid State Circuits, 2020
2019
A Reliability-Oriented Startup Analysis of Injection-Locked Frequency Divider Based on Broken Symmetry Theory.
IEEE Trans. Very Large Scale Integr. Syst., 2019
An Untrimmed BJT-Based Temperature Sensor With Dynamic Current-Gain Compensation in 55-nm CMOS Process.
IEEE Trans. Circuits Syst. II Express Briefs, 2019
IEEE Trans. Circuits Syst. I Regul. Pap., 2019
A K-Band Differential SiGe Stacked Power Amplifier Based on Capacitive Compensation Techniques for Gain Enhancements.
Proceedings of the 62nd IEEE International Midwest Symposium on Circuits and Systems, 2019
An Inductorless 5-GHz Differential Dual Regulated Cross-Cascode Transimpedance Amplifier using 40 nm CMOS.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
A CMOS Temperature Sensor With Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems.
IEEE Trans. Circuits Syst. I Regul. Pap., 2018
Design and optimization of the ring oscillator based injection locked frequency dividers.
Microelectron. J., 2018
A 2.4 mW 2.5 GHz multi-phase clock generator with duty cycle imbalance correction in 0.13 µm CMOS.
Integr., 2018
2017
A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled Oscillator.
J. Electron. Test., 2017
The Investigation and Optimisation of Phase-Induced Amplitude Attenuation in the Injection-Locked Ring Oscillators-Based Receiver.
Circuits Syst. Signal Process., 2017
2016
Circuits Syst. Signal Process., 2016
Design of millimeter-wave transformer balun with isolation circuit in silicon based technology.
Proceedings of the International Symposium on Integrated Circuits, 2016
A wideband digital variable gain amplifier with DC offset cancellation in SiGe 0.18µm BiCMOS technology.
Proceedings of the International Symposium on Integrated Circuits, 2016
Proceedings of the International Symposium on Integrated Circuits, 2016
An inductorless transimpedance amplifier design for 10 Gb/s optical communication using 0.18-µm CMOS.
Proceedings of the International Symposium on Integrated Circuits, 2016
2015
J. Electron. Test., 2015
2014
Analysis and Design of Ultra-Wideband Low-Noise Amplifier With Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.
IEEE Trans. Ind. Electron., 2014
2013
A 12-mW 40-60-GHz 0.18- $\mu {\hbox {m}}$ BiCMOS Oscillator-Less Self-Demodulator for Short-Range Software-Defined Transceivers.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2013
2011
Proceedings of the International SoC Design Conference, 2011
2006
J. Circuits Syst. Comput., 2006
Proceedings of the IFIP VLSI-SoC 2006, 2006
2005
IEEE Trans. Very Large Scale Integr. Syst., 2005
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005