Xinyu Liu

Orcid: 0000-0003-0854-8559

Affiliations:
  • Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China


According to our database1, Xinyu Liu authored at least 36 papers between 2014 and 2025.

Collaborative distances:

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2025
A 112-Gb/s PAM-4 Retimer Transceiver With Jitter-Filtering Clocking Scheme and BER Optimization Technique in 28-nm CMOS.
IEEE J. Solid State Circuits, July, 2025

A 25-GS/s 8-bit Current-Steering DAC With ADC-Based Duty-Cycle Detection in 40-nm CMOS.
IEEE Trans. Very Large Scale Integr. Syst., May, 2025

A Depletion-Mode GaN-Based Envelope Tracking Supply Modulator Utilizing a Novel Coupled PWM Generator.
IEEE Trans. Circuits Syst. II Express Briefs, May, 2025

A Quad-Core VCO Incorporating Area-Saving Folded S-Shaped Tail Filtering in 28-nm CMOS.
IEEE Trans. Very Large Scale Integr. Syst., April, 2025

A Low-Jitter and Low-Reference-Spur Ring-VCO-Based Injection-Locked Clock Multiplier Utilizing a Complementary-Injection Scheme and an Adaptive Pulsewidth Adjustment.
IEEE J. Solid State Circuits, March, 2025

A genetic algorithm-based capacitor mismatch calibration scheme for SAR ADCs.
Microelectron. J., 2025

A 500 MS/s 12b single channel SAR-assisted pipelined ADC with two-stage open-loop dynamic amplifier.
Microelectron. J., 2025

A 100-MHz bandwidth continuous-time sigma-delta ADC with 1 V supply in 28 nm CMOS.
Microelectron. J., 2025

A 14-GS/s 8-bit time-interleaved SAR ADC with multi-path bootstrapped switch and low-jitter sampling PLL in 28-nm CMOS.
Microelectron. J., 2025

A 100 Gb/s PAM4 receiver analog front-end with 33.1-dB boost in 28-nm CMOS process.
IEICE Electron. Express, 2025

A high-speed single channel reconfigurable 1-GS/s to 1.5-GS/s, 8-bit to 6-bit SAR ADC in 28 nm CMOS.
IEICE Electron. Express, 2025

An input buffer with opamp-based bootstrap circuit and cross-coupled substrate technique for 1.5-GS/s pipelined ADC in 40-nm CMOS process.
IEICE Electron. Express, 2025

A dither-based background calibration circuit for pipelined ADCs in 40 nm CMOS.
IEICE Electron. Express, 2025

A 500MS/s 14-bit Pipelined ADC With Startup Protection Circuit in 40 nm CMOS.
IEEE Access, 2025

2024
A 16-Bit 5 GS/s DAC With Redundant-MSB-Based Digital Pre-Distortion Achieving SFDR >61 dBc Up to 2.4 GHz in 40-nm CMOS.
IEEE Trans. Circuits Syst. II Express Briefs, December, 2024

A 28-nm Dual-Mode Explicit Class-F₂₃ VCO With Low-Loss CM Return Path Achieving 70-400-kHz 1/f³ PN Corner Over 4.9-7.3-GHz TR.
IEEE Trans. Very Large Scale Integr. Syst., September, 2024

A 12bit 1.6 GS/s pipelined ADC with multi-level dither injection achieving 68 dB SFDR over PVT.
Microelectron. J., January, 2024

A 1.25-GS/s 10-bit single-channel ring amplifier-based pipelined ADC in 28-nm CMOS.
Microelectron. J., 2024

A 1.25-GS/s 14-bit pipelined ADC using a current-feedback flipped input buffer and large dither technique to achieve high linearity.
IEICE Electron. Express, 2024

A wideband front-end with integrated high-voltage assisted input buffer for high-speed ADC.
IEICE Electron. Express, 2024

2023
A 1-GS/s 12-bit Single-Channel Pipelined ADC in 28-nm CMOS With Input-Split Fully Differential Ring Amplifier.
IEEE Trans. Very Large Scale Integr. Syst., December, 2023

A 64Gbps 1.36 Vppd 1.44pJ/b Fully CMOS-Style Transmitter with Active Hybrid Driver in 28nm CMOS.
Proceedings of the 66th IEEE International Midwest Symposium on Circuits and Systems, 2023

2021
A 1.4-Vppd 64-Gb/s PAM-4 Transmitter with 4-Tap Hybrid FFE Employing Fractionally-Spaced Pre-Emphasis and Baud-Spaced De-Emphasis in 28-nm CMOS.
Proceedings of the 47th ESSCIRC 2021, 2021

A Real-Time Output 50-GS/s 8-bit TI-ADC with Dedicated Calibration Techniques and Deterministic Latency.
Proceedings of the 47th ESSCIRC 2021, 2021

2020
Frequency-Domain Modeling and Analysis of Injection-Locked Oscillators.
IEEE J. Solid State Circuits, 2020

A 50-112-Gb/s PAM-4 Transmitter With a Fractional-Spaced FFE in 65-nm CMOS.
IEEE J. Solid State Circuits, 2020

2019
An 8 GSps 14 bit RF DAC With IM3<-62 dBc up to 3.6 GHz.
IEEE Trans. Circuits Syst. II Express Briefs, 2019

A 1 GS/s 12-bit pipelined folding ADC with a novel encoding algorithm.
IEICE Electron. Express, 2019

A 10-GS/s 8-bit 4-way interleaved folding ADC in 0.18 µm SiGe-BiCMOS.
IEICE Electron. Express, 2019

A 10-GS/s 8-bit SiGe ADC with Isolated 4×4 Analog Input Multiplexer.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

A 112-Gb/s PAM-4 Transmitter With a 2-Tap Fractional-Spaced FFE in 65-nm CMOS.
Proceedings of the 45th IEEE European Solid State Circuits Conference, 2019

2017
A 400-MS/s 10-b 8 interleaved SAR ADC in 0.13 um CMOS.
IEICE Electron. Express, 2017

A 6 mW 325 MS/s 8 bit SAR ADC with background offset calibration.
IEICE Electron. Express, 2017

A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology.
Sci. China Inf. Sci., 2017

2016
A 30Gsps 6bit DAC in SiGe BiCMOS technology.
Proceedings of the 2016 IEEE International Conference on Electronics, Circuits and Systems, 2016

2014
A 4-GS/s 8-bit two-channel time-interleaved folding and interpolating ADC.
Sci. China Inf. Sci., 2014


  Loading...