Zhao-En Ke
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2024
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024