Changyeon Yu

According to our database, Changyeon Yu authored at least 2 papers between 2019 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 3.0 Gb/s/pin 4^th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.

Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, SungHoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2019

A 512Gb 3-bit/Cell 3D 6^th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Wontae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung

Proceedings of the IEEE International Solid- State Circuits Conference, 2019