Tongsung Kim
According to our database1,
Tongsung Kim
authored at least 6 papers
between 2016 and 2024.
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Bibliography
2024
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 3.0 Gb/s/pin 4<sup>th</sup> generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2021
A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage.
IEEE J. Solid State Circuits, 2021
A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
2020
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
2016
A 5-8 Gb/s low-power transmitter with 2-tap pre-emphasis based on toggling serialization.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016