Hongyang Hu

Orcid: 0000-0003-2291-9598

According to our database1, Hongyang Hu authored at least 8 papers between 2013 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2024
Write-Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge.
IEEE Trans. Very Large Scale Integr. Syst., February, 2024

34.9 A Flash-SRAM-ADC-Fused Plastic Computing-in-Memory Macro for Learning in Neural Networks in a Standard 14nm FinFET Process.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023
A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference.
IEEE Trans. Very Large Scale Integr. Syst., December, 2023

A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference.
IEEE J. Solid State Circuits, October, 2023

High-speed and low-power embedded TEC BCH scheme for ReRAM array.
IEICE Electron. Express, 2023

2022
A 55nm 32Mb Digital Flash CIM Using Compressed LUT Multiplier and Low Power WL Voltage Trimming Scheme for AI Edge Inference.
Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

2016
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory.
Microelectron. Reliab., 2016

2013
An Online Multidomain Validation Method for Wireless Sensor Nodes.
Int. J. Distributed Sens. Networks, 2013


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