Henry Park

According to our database, Henry Park authored at least 15 papers between 2011 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

A 4.63pJ/b 112Gb/s DSP-Based PAM-4 Transceiver for a Large-Scale Switch in 5nm FinFET.

Henry Park, Mohammed Abdullatif, Ehung Chen, Ahmed Elmallah, Qaiser Nehal, Miguel Gandara, Tsz-Bin Liu, Amr Khashaba, Joonyeong Lee, Chih-Yi Kuan, Dhinessh Ramachandran, Ruey-Bo Sun, Atharav Atharav, Yusang Chun, Mantian Zhang, Deng-Fu Weng, Chung-Hsien Tsai, Chen-Hao Chang, Chia-Sheng Peng, Sheng-Tsung Hsu, Tamer A. Ali

Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2021

56/112Gbps Wireline Transceivers for Next Generation Data Centers on 7nm FINFET CMOS Technology.

Tamer A. Ali, Mohammed Abdullatif, Henry Park, Ehung Chen, Ramy Awad, Miguel Gandara

Proceedings of the IEEE Custom Integrated Circuits Conference, 2021

2020

6.2 A 460mW 112Gb/s DSP-Based Transceiver with 38dB Loss Compensation for Next-Generation Data Centers in 7nm FinFET Technology.

Tamer A. Ali, Ehung Chen, Henry Park, Ramy Yousry, Yu-Ming Ying, Mohammed Abdullatif, Miguel Gandara, Chun-Cheng Liu, Po-Shuan Weng, Huan-Sheng Chen, Mohammad Elbadry, Qaiser Nehal, Kun-Hung Tsai, Kevin Tan, Yi-Chieh Huang, Chung-Hsien Tsai, Yuyun Chang, Yuan-Hao Tung

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2019

Male Adolescents' and Young Adults' Evaluations of Interracial Exclusion in Offline and Online Settings.

Henry Park, Seçil Gönültas, Kelly Lynn Mulvey, Melanie Killen, Martin D. Ruck

Cyberpsychology Behav. Soc. Netw., 2019

A 180mW 56Gb/s DSP-Based Transceiver for High Density IOs in Data Center Switches in 7nm FinFET Technology.

Tamer A. Ali, Ramy Yousry, Henry Park, Ehung Chen, Po-Shuan Weng, Yi-Chieh Huang, Chun-Cheng Liu, Chien-Hua Wu, Shih-Hao Huang, Chungshi Lin, Ke-Chung Wu, Kun-Hung Tsai, Kai-Wen Tan, Ahmed ElShater, Kuang-Ren Chen, Wei-Hao Tsai, Huan-Sheng Chen, Weiyu Leng, Mazen Soliman

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2016

A 3.8 mW/Gbps Quad-Channel 8.5-13 Gbps Serial Link With a 5 Tap DFE and a 4 Tap Transmit FFE in 28 nm CMOS.

Namik Kocaman, Tamer A. Ali, Lakshmi P. Rao, Ullas Singh, Mohammed M. Abdul-Latif, Yang Liu, Amr Amin Hafez, Henry Park, Anand Vasani, Zhi Huang, Arvindh Iyer, Bo Zhang, Afshin Momtaz

IEEE J. Solid State Circuits, 2016

A 125 mW 8.5-11.5 Gb/s serial link transceiver with a dual path 6-bit ADC/5-tap DFE receiver and a 4-tap FFE transmitter in 28 nm CMOS.

Bharath Raghavan, Aida Varzaghani, Lakshmi P. Rao, Henry Park, Xiaochen Yang, Zhi Huang, Yu Chen, Rama Kattamuri, Chunhui Wu, Bo Zhang, Jun Cao, Afshin Momtaz, Namik Kocaman

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2014

Stability Estimation of a 6T-SRAM Cell Using a Nonlinear Regression.

Henry Park, Chih-Kong Ken Yang

IEEE Trans. Very Large Scale Integr. Syst., 2014

2013

Reference Calibration of Body-Voltage Sensing Circuit for High-Speed STT-RAMs.

Fengbo Ren, Henry Park, Chih-Kong Ken Yang, Dejan Markovic

IEEE Trans. Circuits Syst. I Regul. Pap., 2013

An INL Yield Model of the Digital-to-Analog Converter.

Henry Park, Chih-Kong Ken Yang

IEEE Trans. Circuits Syst. I Regul. Pap., 2013

In Situ SRAM Static Stability Estimation in 65-nm CMOS.

Henry Park, Chih-Kong Ken Yang

IEEE J. Solid State Circuits, 2013

A digitally-calibrated 10GS/s reconfigurable flash ADC in 65-nm CMOS.

Ramy Yousry, Henry Park, E-Hung Chen, Chih-Kong Ken Yang

Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

2012

Nearly Exact Analytical Formulation of the DNL Yield of the Digital-to-Analog Converter.

Henry Park, Chih-Kong Ken Yang

IEEE Trans. Circuits Syst. II Express Briefs, 2012

A body-voltage-sensing-based short pulse reading circuit for spin-torque transfer RAMs (STT-RAMs).

Fengbo Ren, Henry Park, Richard Dorrance, Yuta Toriyama, Chih-Kong Ken Yang, Dejan Markovic

Proceedings of the Thirteenth International Symposium on Quality Electronic Design, 2012

2011

Analysis of STT-RAM cell design with multiple MTJs per access.

Henry Park, Richard Dorrance, Amr Amin Hafez, Fengbo Ren, Dejan Markovic, Chih-Kong Ken Yang

Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures, 2011