Yongmi Kim

According to our database1, Yongmi Kim authored at least 3 papers between 2012 and 2020.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2020
A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx.
IEEE J. Solid State Circuits, 2020

2019

2012
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012


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