Kang-Deog Suh

According to our database1, Kang-Deog Suh authored at least 12 papers between 1995 and 2010.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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In proceedings 
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PhD thesis 
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Links

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Bibliography

2010
Dynamic Vpass Controlled Program Scheme and Optimized Erase Vth Control for High Program Inhibition in MLC NAND Flash Memories.
IEEE J. Solid State Circuits, 2010

Boosted Bit Line Program Scheme for Low Operating Voltage MLC NAND Flash Memory.
IEICE Trans. Electron., 2010

2003
A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications.
IEEE J. Solid State Circuits, 2003

2002
High-performance 1-Gb-NAND flash memory with 0.12-μm technology.
IEEE J. Solid State Circuits, 2002

2001
A dual-mode NAND flash memory: 1-Gb multilevel and high-performance 512-Mb single-level modes.
IEEE J. Solid State Circuits, 2001

2000
A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit.
IEEE J. Solid State Circuits, 2000

A 3.3-V, 4-Mb nonvolatile ferroelectric RAM with selectively driven double-pulsed plate read/write-back scheme.
IEEE J. Solid State Circuits, 2000

1998
An 8-bit-resolution, 360-μs write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS).
IEEE J. Solid State Circuits, 1998

1997
A 120-mm<sup>2</sup> 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed.
IEEE J. Solid State Circuits, 1997

A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology.
IEEE J. Solid State Circuits, 1997

1996
A 117-mm<sup>2</sup> 3.3-V only 128-Mb multilevel NAND flash memory for mass storage applications.
IEEE J. Solid State Circuits, 1996

1995
A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme.
IEEE J. Solid State Circuits, November, 1995


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