Sheng-Po Huang
According to our database1,
Sheng-Po Huang
authored at least 6 papers
between 2020 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10<sup>12</sup> Write Endurance and Integrated Margin-Expansion Schemes.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices.
IEEE J. Solid State Circuits, 2023
2022
A 40-nm, 2M-Cell, 8b-Precision, Hybrid SLC-MLC PCM Computing-in-Memory Macro with 20.5 - 65.0TOPS/W for Tiny-Al Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020