Takuya Saraya

According to our database1, Takuya Saraya authored at least 13 papers between 2011 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Links

On csauthors.net:

Bibliography

2023
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022
3-Layer stacked pixel-parallel CMOS image sensors using hybrid bonding of SOI wafers.
Proceedings of the Imaging Sensors and Systems 2022, online, January 15-26, 2022, 2022

2021
Recent Progress of Double/Dual-Gate Silicon IGBT Technologies.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019
Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

Triple-Layering Technology for Pixel-Parallel CMOS Image Sensors Developed by Hybrid Bonding of SOI Wafers.
Proceedings of the 2019 International 3D Systems Integration Conference (3DIC), 2019

2018
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Quarter Video Graphics Array Full-Digital Image Sensing with Wide Dynamic Range and Linear Output Using Pixel-Wise 3D Integration.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017

2015
Three-dimensional integrated circuits and stacked CMOS image sensors using direct bonding of SOI layers.
Proceedings of the 2015 International 3D Systems Integration Conference, 2015

2013
Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress.
IEICE Trans. Electron., 2013

NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM.
IEICE Trans. Electron., 2013

2011
Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011


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