Wei-Min Chan
According to our database1,
Wei-Min Chan
authored at least 7 papers
between 2012 and 2021.
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Bibliography
2021
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V<sub>MIN</sub> Applications.
IEEE J. Solid State Circuits, 2021
2017
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016
2015
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
IEEE J. Solid State Circuits, 2015
2014
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM.
IEEE J. Solid State Circuits, 2012