Nicolas Planes

According to our database, Nicolas Planes authored at least 10 papers between 2002 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures.

Lucas Nyssens, Arka Halder, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

Back-gate bias effect on UTBB-FDSOI non-linearity performance.

B. Kazemi Esfeh, Valeria Kilchytska, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.

Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2015

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Variability of UTBB MOSFET analog figures of merit in wide frequency range.

Sergej Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, V. Barral, Nicolas Planes, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs.

Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Ultra-wide body-bias range LDPC decoder in 28nm UTBB FDSOI technology.

Philippe Flatresse, Bastien Giraud, Jean-Philippe Noel, Bertrand Pelloux-Prayer, Fabien Giner, Deepak-Kumar Arora, Franck Arnaud, Nicolas Planes, Julien Le Coz, Olivier Thomas, Sylvain Engels, Giorgio Cesana, Robin Wilson, Pascal Urard

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2012

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs.

Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2002

Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC).

Thierry Devoivre, M. Lunenborg, C. Julien, J.-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P.-J. Goirand, R. Palla, I. Thomas, F. Guyader, David Roy, B. Borot, Nicolas Planes, Sylvie Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond

Proceedings of the 10th IEEE International Workshop on Memory Technology, 2002