Hanzhi Xun

According to our database, Hanzhi Xun authored at least 5 papers in 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2023

Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs.

Sicong Yuan, Z. Zhang, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, M. Taouil, Said Hamdioui

Proceedings of the IEEE International Test Conference, 2023

Device-Aware Test for Ion Depletion Defects in RRAMs.

Hanzhi Xun, Sicong Yuan, Moritz Fieback, Hassen Aziza, Mottaqiallah Taouil, Said Hamdioui

Proceedings of the IEEE International Test Conference, 2023

Data Background-Based Test Development for All Interconnect and Contact Defects in RRAMs.

Hanzhi Xun, Moritz Fieback, Sicong Yuan, Ziwei Zhang, Mottaqiallah Taouil, Said Hamdioui

Proceedings of the IEEE European Test Symposium, 2023

Device-Aware Test for Back-Hopping Defects in STT-MRAMs.

Sicong Yuan, Mottaqiallah Taouil, Moritz Fieback, Hanzhi Xun, Erik Jan Marinissen, Gouri Sankar Kar, Sidharth Rao, Sebastien Couet, Said Hamdioui

Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2023

Characterization and Test of Intermittent Over RESET in RRAMs.

Hanzhi Xun, Moritz Fieback, Sicong Yuan, Hassen Aziza, Mathijs Heidekamp, Thiago Copetti, Letícia Maria Veiras Bolzani Poehls, Mottaqiallah Taouil, Said Hamdioui

Proceedings of the 32nd IEEE Asian Test Symposium, 2023