Hiroaki Honjo
Orcid: 0000-0002-5742-108X
According to our database1,
Hiroaki Honjo
authored at least 16 papers
between 2007 and 2021.
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Bibliography
2021
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition.
IEEE J. Solid State Circuits, 2021
2020
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020
2019
A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications.
IEEE J. Solid State Circuits, 2019
An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2015
Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction.
IEEE J. Solid State Circuits, 2015
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure.
Proceedings of the Symposium on VLSI Circuits, 2015
2014
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing.
Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014
2013
Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications.
IEICE Electron. Express, 2013
Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times.
Proceedings of the Symposium on VLSI Circuits, 2012
A 3.14 um<sup>2</sup> 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture.
Proceedings of the Symposium on VLSI Circuits, 2012
High-speed simulator including accurate MTJ models for spintronics integrated circuit design.
Proceedings of the 2012 IEEE International Symposium on Circuits and Systems, 2012
2009
Proceedings of the IEEE International Solid-State Circuits Conference, 2009
2007