Il-Min Yi

Orcid: 0000-0002-6505-1138

According to our database1, Il-Min Yi authored at least 19 papers between 2012 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
A Jitter-Robust 40 Gb/s ADC-Based Multicarrier Receiver Front-End With 4-GS/s Baseband Pipeline-SAR ADCs in 22-nm FinFET.
IEEE J. Solid State Circuits, March, 2023

A 38-GS/s 7-bit Pipelined-SAR ADC With Speed- Enhanced Bootstrapped Switch and Output Level Shifting Technique in 22-nm FinFET.
IEEE J. Solid State Circuits, 2023

A 50Gb/s DAC-Based Multicarrier Polar Transmitter in 22nm FinFET.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A Sub-500fJ/bit 3D Direct Bond Silicon Photonic Transceiver in 12nm FinFET.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A Direct Bond Interconnect 3D Co-Integrated Silicon-Photonic Transceiver in 12nm FinFET with -20.3dBm OMA Sensitivity and 691fJ/bit.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

2022
LLM: Realizing Low-Latency Memory by Exploiting Embedded Silicon Photonics for Irregular Workloads.
Proceedings of the High Performance Computing - 37th International Conference, 2022

2021
A 4-GS/s 11.3-mW 7-bit Time-Based ADC With Folding Voltage-to-Time Converter and Pipelined TDC in 65-nm CMOS.
IEEE J. Solid State Circuits, 2021

A 15.1-mW 6-GS/s 6-bit Single-Channel Flash ADC With Selectively Activated 8× Time-Domain Latch Interpolation.
IEEE J. Solid State Circuits, 2021

2018
A Time-Based Receiver With 2-Tap Decision Feedback Equalizer for Single-Ended Mobile DRAM Interface.
IEEE J. Solid State Circuits, 2018

A Summer-Embedded Sense Amplifier for High-Speed Decision Feedback Equalizer.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2018

A 15.1-mW 6-GS/s 6-bit Flash ADC with Selectively Activated 8× Time-Domain Interpolation.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017
23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016
A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s.
IEEE Trans. Circuits Syst. I Regul. Pap., 2016

A Single-Ended Parallel Transceiver With Four-Bit Four-Wire Four-Level Balanced Coding for the Point-to-Point DRAM Interface.
IEEE J. Solid State Circuits, 2016

A low-EMI four-bit four-wire single-ended DRAM interface by using a three-level balanced coding scheme.
Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

2014
A 40-mV-Swing Single-Ended Transceiver for TSV with a Switched-Diode RX Termination.
IEEE Trans. Circuits Syst. II Express Briefs, 2014

An 80 mV-Swing Single-Ended Duobinary Transceiver With a TIA RX Termination for the Point-to-Point DRAM Interface.
IEEE J. Solid State Circuits, 2014

2012
A Transmitter to Compensate for Crosstalk-Induced Jitter by Subtracting a Rectangular Crosstalk Waveform From Data Signal During the Data Transition Time in Coupled Microstrip Lines.
IEEE J. Solid State Circuits, 2012

An on-chip TSV emulation using metal bar surrounded by metal ring to develop interface circuits.
Proceedings of the International SoC Design Conference, 2012


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