Nobuyuki Sugii

Orcid: 0000-0001-8006-8854

According to our database1, Nobuyuki Sugii authored at least 23 papers between 2006 and 2017.

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In proceedings 
PhD thesis 


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A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications.
Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

Resistive switching properties of a thin SiO<sub>2</sub> layer with CeO<sub>x</sub> buffer layer on n<sup>+</sup> and p<sup>+</sup> Si bottom electrodes.
Microelectron. Reliab., 2016

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab., 2015

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab., 2015

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM.
IEEE Micro, 2015

A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode.
IEICE Trans. Electron., 2015

A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end.
IEICE Electron. Express, 2015

Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM.
Proceedings of the Symposium on VLSI Circuits, 2015

Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM.
Proceedings of the 2015 IEEE Symposium in Low-Power and High-Speed Chips, 2015

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab., 2014

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab., 2014

A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology.
Proceedings of the 2014 IEEE Symposium on Low-Power and High-Speed Chips, 2014

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
Proceedings of the European Solid-State Device Research Conference, 2013

Oxide and interface trap densities estimation in ultrathin W/La<sub>2</sub>O<sub>3</sub>/Si MOS capacitors.
Microelectron. Reliab., 2012

Resistive switching behavior of a CeO<sub>2</sub> based ReRAM cell incorporated with Si buffer layer.
Microelectron. Reliab., 2012

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Effects of La<sub>2</sub>O<sub>3</sub> incorporation in HfO<sub>2</sub> gated nMOSFETs on low-frequency noise.
Microelectron. Reliab., 2011

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La<sub>2</sub>O<sub>3</sub> gate dielectrics.
Microelectron. Reliab., 2010

SrO capping effect for La<sub>2</sub>O<sub>3</sub>/Ce-silicate gate dielectrics.
Microelectron. Reliab., 2010

Electrical characteristics of MOSFETs with La<sub>2</sub>O<sub>3</sub>/Y<sub>2</sub>O<sub>3</sub> gate stack.
Microelectron. Reliab., 2008

Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007

Effective mobility and interface-state density of La<sub>2</sub>O<sub>3</sub> nMISFETs after post deposition annealing.
IEICE Electron. Express, 2006