Kazuyasu Fujishima

According to our database, Kazuyasu Fujishima authored at least 12 papers between 1986 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2005

A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture.

Hideyuki Noda, Kazunari Inoue, Masayuki Kuroiwa, Futoshi Igaue, Kouji Yamamoto, Hans Jürgen Mattausch, Tetsushi Koide, Atsushi Amo, Atsushi Hachisuka, Shinya Soeda, Isamu Hayashi, Fukashi Morishita, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2005

A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications.

Fukashi Morishita, Isamu Hayashi, Hideto Matsuoka, Kazuhiro Takahashi, Kuniyasu Shigeta, Takayuki Gyohten, Mitsutaka Niiro, Hideyuki Noda, Mako Okamoto, Atsushi Hachisuka, Atsushi Amo, Hiroki Shinkawata, Tatsuo Kasaoka, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2005

Embedded Low-Power Dynamic TCAM Architecture with Transparently Scheduled Refresh.

Hideyuki Noda, Kazunari Inoue, Hans Jürgen Mattausch, Tetsushi Koide, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEICE Trans. Electron., 2005

2000

High-performance embedded SOI DRAM architecture for the low-power supply.

Tadaaki Yamauchi, Fukashi Morishita, Shigenobu Maeda, Kazutami Arimoto, Kazuyasu Fujishima, Hideyuki Ozaki, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2000

1994

An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology.

Katsuhiro Suma, Takahiro Tsuruda, Hideto Hidaka, Takahisa Eimori, Toshiyuki Oashi, Yasuo Yamaguchi, Toshiaki Iwamatsu, Masakazu Hirose, Fukashi Morishita, Kazutarni Arimoto, Kazuyasu Fujishima, Yasuo Inoue, Tadashi Nishimura, Tsutomu Yoshihara

IEEE J. Solid State Circuits, November, 1994

An experimental 256-Mb DRAM with boosted sense-ground scheme.

Mikio Asakura, Tsukasa Ooishi, Masaki Tsukude, Shigeki Tomishima, Takahisa Eimori, Hideto Hidaka, Yoshikazu Ohno, Kazutani Arimoto, Kazuyasu Fujishima, Tadashi Nishimura, Tsutomu Yoshihara

IEEE J. Solid State Circuits, November, 1994

A well-synchronized sensing/equalizing method for sub-1.0-V operating advanced DRAMs.

Tsukasa Ooishi, Mikio Asakura, Shigeki Tomishima, Hideto Hidaka, Kazutami Arimoto, Kazuyasu Fujishima

IEEE J. Solid State Circuits, April, 1994

1993

Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters.

Masaki Tsukude, Kazutami Arimoto, Hideto Hidaka, Yasuhiro Konishi, Masanori Hayashikoshi, Katsuhiro Suma, Kazuyasu Fujishima

IEEE Des. Test Comput., 1993

1992

A Testing Technique for ULSI Memory with On-Chip Voltage Down Converter.

Masaki Tsukude, Kazutami Arimoto, Hideto Hidaka, Yasuhiro Konishi, Masanori Hayashikoshi, Katsunori Suma, Kazuyasu Fujishima

Proceedings of the Proceedings IEEE International Test Conference 1992, 1992

1990

The cache DRAM architecture: a DRAM with an on-chip cache memory.

Hideto Hidaka, Yoshio Matsuda, Mikio Asakura, Kazuyasu Fujishima

IEEE Micro, 1990

1989

A New Array Architecture for Parallel Testing in VLSI Memories.

Yoshio Matsuda, Kazutami Arimoto, Masaki Tsukude, Tsukasa Oishi, Kazuyasu Fujishima

Proceedings of the Proceedings International Test Conference 1989, 1989

1986

Redundancy Test for 1 Mbit DRAM Using Multi-Bit-Test Mode.

Y. Nishimura, Mitsuhiro Hamada, Hideto Hidaka, Hideyuki Ozaki, Kazuyasu Fujishima, Y. Hayasaka

Proceedings of the Proceedings International Test Conference 1986, 1986