Isamu Hayashi

According to our database, Isamu Hayashi authored at least 12 papers between 2005 and 2014.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2014

13.6 A 28nm 400MHz 4-parallel 1.6Gsearch/s 80Mb ternary CAM.

Koji Nii, Teruhiko Amano, Naoya Watanabe, Minoru Yamawaki, Kenji Yoshinaga, Mihoko Wada, Isamu Hayashi

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013

A 250-MHz 18-Mb Full Ternary CAM With Low-Voltage Matchline Sensing Scheme in 65-nm CMOS.

Isamu Hayashi, Teruhiko Amano, Naoya Watanabe, Yuji Yano, Yasuto Kuroda, M. Shirata, Katsumi Dosaka, Koji Nii, Hideyuki Noda, Hiroyuki Kawai

IEEE J. Solid State Circuits, 2013

2012

A 0.7V 4.1mW 850Mbps/ch inductive-coupling transceiver with adaptive pulse width controller in 65nm CMOS.

Takeshi Matsubara, Isamu Hayashi, Abul Hasan Johari, Tadahiro Kuroda, Hiroki Ishikuro

Proceedings of the 2012 IEEE Radio and Wireless Symposium, 2012

2010

A 0.5V 6-bit scalable phase interpolator.

Satoshi Kumaki, Abul Hasan Johari, Takeshi Matsubara, Isamu Hayashi, Hiroki Ishikuro

Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2010

0.5 V multi-phase digital controlled oscillator with smooth phase transition circuit.

Abul Hasan Johari, Satoshi Kumaki, Takeshi Matsubara, Isamu Hayashi, Hiroki Ishikuro

Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2010

2007

A Configurable Enhanced TTRAM Macro for System-Level Power Management Unified Memory.

Fukashi Morishita, Isamu Hayashi, Takayuki Gyohten, Hideyuki Noda, Takashi Ipposhi, Hiroki Shimano, Katsumi Dosaka, Kazutami Arimoto

IEEE J. Solid State Circuits, 2007

A High-Density Scalable Twin Transistor RAM (TTRAM) With Verify Control for SOI Platform Memory IPs.

Kazutami Arimoto, Fukashi Morishita, Isamu Hayashi, Katsumi Dosaka, Hiroki Shimano, Takashi Ipposhi

IEEE J. Solid State Circuits, 2007

A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI.

Fukashi Morishita, Hideyuki Noda, Isamu Hayashi, Takayuki Gyohten, Mako Okamoto, Takashi Ipposhi, Shigeto Maegawa, Katsumi Dosaka, Kazutami Arimoto

IEICE Trans. Electron., 2007

2006

An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design.

Takayuki Gyohten, Fukashi Morishita, Isamu Hayashi, Mako Okamoto, Hideyuki Noda, Katsumi Dosaka, Kazutami Arimoto, Yasutaka Horiba

IEICE Trans. Electron., 2006

A Scalable ET2RAM (SETRAM) with Verify Control for SoC Platform Memory IP on SOI.

Kazutami Arimoto, Fukashi Morishita, Isamu Hayashi, Tetsushi Tanizaki, Takashi Ipposhi, Katsumi Dosaka

Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006

2005

A cost-efficient high-performance dynamic TCAM with pipelined hierarchical searching and shift redundancy architecture.

Hideyuki Noda, Kazunari Inoue, Masayuki Kuroiwa, Futoshi Igaue, Kouji Yamamoto, Hans Jürgen Mattausch, Tetsushi Koide, Atsushi Amo, Atsushi Hachisuka, Shinya Soeda, Isamu Hayashi, Fukashi Morishita, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2005

A 312-MHz 16-Mb random-cycle embedded DRAM macro with a power-down data retention mode for mobile applications.

Fukashi Morishita, Isamu Hayashi, Hideto Matsuoka, Kazuhiro Takahashi, Kuniyasu Shigeta, Takayuki Gyohten, Mitsutaka Niiro, Hideyuki Noda, Mako Okamoto, Atsushi Hachisuka, Atsushi Amo, Hiroki Shinkawata, Tatsuo Kasaoka, Katsumi Dosaka, Kazutami Arimoto, Kazuyasu Fujishima, Kenji Anami, Tsutomu Yoshihara

IEEE J. Solid State Circuits, 2005