Hideto Hidaka

According to our database1, Hideto Hidaka authored at least 30 papers between 1986 and 2020.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2017, "For leadership in high-density memory technologies for automotive applications".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2020
Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age.
IEICE Trans. Electron., 2020

2019
Foreword.
IEICE Trans. Electron., 2019

A Cost-Effective 1T-4MTJ Embedded MRAM Architecture with Voltage Offset Self-Reference Sensing Scheme for IoT Applications.
IEICE Trans. Electron., 2019

2018
Applications and Technology Trend in Embedded Flash Memory.
Proceedings of the Embedded Flash Memory for Embedded Systems: Technology, 2018

Introduction.
Proceedings of the Embedded Flash Memory for Embedded Systems: Technology, 2018

2016
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°C.
IEEE J. Solid State Circuits, 2016

7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015
7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

How future mobility meets IT: Cyber-physical system designs revisit semiconductor technology.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2015

2014
40-nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macros for Automotive With 160-MHz Random Access for Code and Endurance Over 10 M Cycles for Data at the Junction Temperature of 170°C.
IEEE J. Solid State Circuits, 2014

2013
40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2012
Session 1 overview: Plenary session.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2010
Silicon 3D-integration technology and systems.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009
Introduction to the Special Issue on the 2008 IEEE International Solid-State Circuits Conference.
IEEE J. Solid State Circuits, 2009

2007
Non-Volatile Memories.
Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

2002
0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability.
IEEE J. Solid State Circuits, 2002

A Variable Drivability (VD) Output Buffer for the System In a Package (SIP) and High Frequency Wafer Test.
Proceedings of the Proceedings IEEE International Test Conference 2002, 2002

2001
A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications.
IEEE J. Solid State Circuits, 2001

A shared built-in self-repair analysis for multiple embedded memories.
Proceedings of the IEEE 2001 Custom Integrated Circuits Conference, 2001

2000
A built-in self-repair analyzer (CRESTA) for embedded DRAMs.
Proceedings of the Proceedings IEEE International Test Conference 2000, 2000

1999
A precise on-chip voltage generator for a gigascale DRAM with a negative word-line scheme.
IEEE J. Solid State Circuits, 1999

1996
A mixed-mode voltage down converter with impedance adjustment circuitry for low-voltage high-frequency memories.
IEEE J. Solid State Circuits, 1996

1995
An automatic temperature compensation of internal sense ground for subquarter micron DRAM's.
IEEE J. Solid State Circuits, April, 1995

1994
An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology.
IEEE J. Solid State Circuits, November, 1994

An experimental 256-Mb DRAM with boosted sense-ground scheme.
IEEE J. Solid State Circuits, November, 1994

A well-synchronized sensing/equalizing method for sub-1.0-V operating advanced DRAMs.
IEEE J. Solid State Circuits, April, 1994

1993
Highly Reliable Testing of ULSI Memories with On-Chip Voltage-Down Converters.
IEEE Des. Test Comput., 1993

1992
A Testing Technique for ULSI Memory with On-Chip Voltage Down Converter.
Proceedings of the Proceedings IEEE International Test Conference 1992, 1992

1990
The cache DRAM architecture: a DRAM with an on-chip cache memory.
IEEE Micro, 1990

1986
Redundancy Test for 1 Mbit DRAM Using Multi-Bit-Test Mode.
Proceedings of the Proceedings International Test Conference 1986, 1986


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