Shigeki Ohbayashi

According to our database, Shigeki Ohbayashi authored at least 14 papers between 1991 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

A Yield and Reliability Improvement Methodology Based on Logic Redundant Repair with a Repairable Scan Flip-Flop Designed by Push Rule.

Masanori Kurimoto, Jun Matsushima, Shigeki Ohbayashi, Yoshiaki Fukui, Michio Komoda, Nobuhiro Tsuda

ACM Trans. Design Autom. Electr. Syst., 2012

2010

A yield improvement methodology based on logic redundant repair with a repairable scan flip-flop designed by push rule.

Masanori Kurimoto, Jun Matsushima, Shigeki Ohbayashi, Yoshiaki Fukui

Proceedings of the 11th International Symposium on Quality of Electronic Design (ISQED 2010), 2010

2009

Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access.

Koji Nii, Yasumasa Tsukamoto, Makoto Yabuuchi, Yasuhiro Masuda, Susumu Imaoka, Keiichi Usui, Shigeki Ohbayashi, Hiroshi Makino, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2009

2008

A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die.

Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Tsutomu Yoshihara, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2008

A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations.

Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2008

A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues.

Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu

IEEE J. Solid State Circuits, 2008

A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology.

Masako Fujii, Koji Nii, Hiroshi Makino, Shigeki Ohbayashi, Motoshige Igarashi, Takeshi Kawamura, Miho Yokota, Nobuhiro Tsuda, Tomoaki Yoshizawa, Toshikazu Tsutsui, Naohiko Takeshita, Naofumi Murata, Tomohiro Tanaka, Takanari Fujiwara, Kyoko Asahina, Masakazu Okada, Kazuo Tomita, Masahiko Takeuchi, Shigehisa Yamamoto, Hiromitsu Sugimoto, Hirofumi Shinohara

IEICE Trans. Electron., 2008

2007

A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits.

Shigeki Ohbayashi, Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Susumu Imaoka, Yuji Oda, Tsutomu Yoshihara, Motoshige Igarashi, Masahiko Takeuchi, Hiroshi Kawashima, Yasuo Yamaguchi, Kazuhiro Tsukamoto, Masahide Inuishi, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

IEEE J. Solid State Circuits, 2007

A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations.

Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die.

Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

2005

Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability.

Yasumasa Tsukamoto, Koji Nii, Susumu Imaoka, Yuji Oda, Shigeki Ohbayashi, Tomoaki Yoshizawa, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

Proceedings of the 2005 International Conference on Computer-Aided Design, 2005

1999

A 500-MHz pipelined burst SRAM with improved SER immunity.

Hirotoshi Sato, Tomohisa Wada, Shigeki Ohbayashi, Kunihiko Kozaru, Yasuyuki Okamoto, Yoshiko Higashide, Tadayuki Shimizu, Yukio Maki, Rui Morimoto, Hisakazu Otoi, Tsuyoshi Koga, Hiroki Honda, Makoto Taniguchi, Yutaka Arita, Toru Shiomi

IEEE J. Solid State Circuits, 1999

1993

A 5.8-ns 256-Kb BiCMOS TTL SRAM with T-Shaped bit line architecture.

Toru Shiomi, Tomohisa Wada, Shigeki Ohbayashi, Atsushi Ohba, Hiroki Honda, Yoshiyuki Ishigaki, Shiro Hine, Kenji Anami, Kimio Suzuki, Tadashi Sumi

IEEE J. Solid State Circuits, December, 1993

1991

A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy.

Atsushi Ohba, Shigeki Ohbayashi, Toru Shiomi, Satoshi Takano, Kenji Anami, Hiroki Honda, Yoshiyuki Ishigaki, Masahiro Hatanaka, Shigeo Nagao, Shimpei Kayano

IEEE J. Solid State Circuits, April, 1991