Susumu Fujimura

According to our database, Susumu Fujimura authored at least 5 papers between 2006 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

A 2Tb 4b/Cell 6-Plane 3D-Flash Memory with 37.6Gb/mm² Bit Density and >85MB/s Write Throughput.

Jayanth M. Thimmaiah, Ryuji Yamashita, In-Soo Yoon, Jason Li, Cynthia Hsu, Takuya Ariki, Naoki Ookuma, Yosuke Kato, Koichiro Hayashi, Kazuki Yamauchi, Indra K. V, Masahiro Kano, Sirisha Bhamidipati, Sneha Bhatia, Seema Malhotra, Naoki Ojima, Ella Wu, Zhiyong Yang, Frank W. Tsai, Mathias Bayle, Naoyuki Minami, Yasuyuki Fujihara, Kei Kitamura, Tomofumi Kitani, Takuyo Kodama, Takaya Handa, Naoaki Kanagawa, Yuki Ishizaki, Susumu Fujimura, Yoshinao Suzuki, Mario Sako, Yumi Higashi, Yoshihisa Watanabe, Toshiyuki Kouchi, Aravinth V, Chin-Yi Chen, Xiang Yang, Guirong Liang, Jenny Wang

Proceedings of the IEEE International Solid-State Circuits Conference, 2026

2018

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology.

Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2008

A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology.

Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le, Eiichi Makino, Takashi Taira, Hiroyuki Otake, Norifumi Kajimura, Susumu Fujimura, Yoshiaki Takeuchi, Mikihiko Itoh, Masanobu Shirakawa, Dai Nakamura, Yuya Suzuki, Yuki Okukawa, Masatsugu Kojima, Kazuhide Yoneya, Takamichi Arizono, Toshiki Hisada, Shinji Miyamoto, Mitsuhiro Noguchi, Toshitake Yaegashi, Masaaki Higashitani, Fumitoshi Ito, Teruhiko Kamei, Gertjan Hemink, Tooru Maruyama, Kazumi Ino, Shigeo Ohshima

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

A 56-nm CMOS 99-mm² 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput.

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima

IEEE J. Solid State Circuits, 2007

2006

A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput.

Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006