Takahiro Mori

According to our database, Takahiro Mori authored at least 20 papers between 2012 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures.

Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Shinichi Takagi, Masaharu Kobayashi, Toshiro Hiramoto

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs.

Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori

IEEE Access, 2024

Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation.

Shunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori

Proceedings of the Device Research Conference, 2024

2023

A Cryogenic CMOS Current Integrator and Correlation Double Sampling Circuit for Spin Qubit Readout.

Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori

IEEE Trans. Circuits Syst. I Regul. Pap., December, 2023

Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist.

Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori

IEICE Trans. Electron., October, 2023

Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality.

Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori

IEEE Access, 2023

Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs.

Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Silicon Technologies for Quantum Computing.

Takahiro Mori

Proceedings of the International Conference on IC Design and Technology, 2023

2022

Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation.

Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A Cryogenic CMOS Current Comparator for Spin Qubit Readout Achieving Fast Readout Time and High Current Resolution.

Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers.

Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2015

Control moment gyroscope for swing motion control.

Takahiro Mori, Guillermo Enriquez, Huei Ee Yap, Shuji Hashimoto

Proceedings of the 2015 IEEE International Conference on Robotics and Biomimetics, 2015

PBTI for N-type tunnel FinFETs.

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Development of constant torque device and its application to power assist systems.

Yasuhiro Minamiyama, Takanori Kiyota, Takahiro Mori, Noboru Sugimoto

Proceedings of the IEEE/ASME International Conference on Advanced Intelligent Mechatronics, 2014

2013

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.

Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Photometric Linearization by Robust PCA for Shadow and Specular Removal.

Takahiro Mori, Ryohei Taketa, Shinsaku Hiura, Kosuke Sato

Proceedings of the Computer Vision, Imaging and Computer Graphics. Theory and Application, 2012

Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion.

Takahiro Mori, Shinsaku Hiura, Kosuke Sato

Proceedings of the VISAPP 2012, 2012