Masahiro Kano

According to our database, Masahiro Kano authored at least 8 papers between 2015 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A 1Tb 3b/cell 3D-Flash Memory with a 29%-Improved-Energy-Efficiency Read Operation and 4.8Gb/s Power-Isolated Low-Tapped-Termination I/Os.

Kosuke Yanagidaira, Mario Sako, Yasuhiro Hirashima, Junya Matsuno, Yumi Higashi, Yutaka Shimizu, Akihiro Imamoto, Kazuaki Kawaguchi, Koji Tabata, Takeshi Nakano, Yusuke Ochi, Hiroaki Hoshino, Takeshi Hioka, Shigehito Saigusa, Hiroki Date, Masaki Unno, Jumpei Sato, You Kamata, Hardwell Chibvongodze, Naoki Ojima, Hiroshi Sugawara, Masahiro Kano, Jang-woo Lee, Hiroyuki Mizukoshi, Ryuji Yamashita, Kensaku Abe, Naohito Morozumi, In-Soo Yoon, Takuya Ariki, Jong Hak Yuh, Khin Htoo, Yosuke Kato, Yoshihisa Watanabe, Toshiyuki Kouchi

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2023

A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm² bit density with 3.2Gbps interface and 205MB/s program throughput.

Mario Sako, T. Nakajima, Fumihiro Kono, Takeshi Nakano, Masaki Fujiu, Junji Musha, Dai Nakamura, Naoaki Kanagawa, Yutaka Shimizu, Kosuke Yanagidaira, Tetsuaki Utsumi, T. Kawano, Yoshikazu Hosomura, Hiroki Yabe, Masahiro Kano, Hiroshi Sugawara, A. H. Sravan, K. Hayashi, Toshiyuki Kouchi, Yoshihisa Watanabe

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2021

30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology.

Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2018

Triangular Active Charge Injection Method for Resonant Power Supply Noise Reduction.

Masahiro Kano, Toru Nakura, Tetsuya Iizuka, Kunihiro Asada

IEICE Trans. Electron., 2018

2017

A triangular active charge injection scheme using a resistive current for resonant power supply noise suppression.

Masahiro Kano, Toru Nakura, Tetsuya Iizuka, Kunihiro Asada

Proceedings of the 24th IEEE International Conference on Electronics, Circuits and Systems, 2017

2016

Analysis and design of a triangular active charge injection for stabilizing resonant power supply noise.

Masahiro Kano, Toru Nakura, Kunihiro Asada

Proceedings of the 17th International Symposium on Quality Electronic Design, 2016

Resonant power supply noise reduction using a triangular active charge injection.

Masahiro Kano, Toru Nakura, Tetsuya Iizuka, Kunihiro Asada

Proceedings of the 2016 IEEE International Conference on Electronics, Circuits and Systems, 2016

2015

Resonant Power Supply Noise Reduction by STO Capacitors Fabricated on Interposer.

Toru Nakura, Masahiro Kano, Masamitsu Yoshizawa, Atsunori Hattori, Kunihiro Asada

IEICE Trans. Electron., 2015