Takaho Tanigawa

According to our database, Takaho Tanigawa authored at least 9 papers between 1990 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability.

K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, Takaho Tanigawa, Shoji Ikeda, Takamitsu Shinada, Hiroki Koike, Tetsuo Endoh, T. Makino, Takeshi Ohshima

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition.

Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

IEEE J. Solid State Circuits, 2021

2020

Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage.

Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka, Yasuo Noguchi, Mitsuo Yasuhira, Yitao Ma, Hui Shen, Shunsuke Fukami, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

Proceedings of the IEEE Symposium on VLSI Circuits, 2020

2019

A 47.14-µW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications.

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

IEEE J. Solid State Circuits, 2019

An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz.

Masanori Natsui, Daisuke Suzuki, Akira Tamakoshi, Toshinari Watanabe, Hiroaki Honjo, Hiroki Koike, Takashi Nasuno, Yitao Ma, Takaho Tanigawa, Yasuo Noguchi, Mitsuo Yasuhira, Hideo Sato, Shoji Ikeda, Hideo Ohno, Tetsuo Endoh, Takahiro Hanyu

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2006

Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor.

Yasushi Yamagata, Hiroki Shirai, Hirotoshi Sugimura, S. Arai, Tomoko Wake, Ken Inoue, Takashi Sakoh, Masato Sakao, Takaho Tanigawa

Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006

1993

A 30-ns 256-Mb DRAM with a multidivided array structure.

Tadahiko Sugibayashi, Toshio Takeshima, Isao Naritake, Tatsuya Matano, Hiroshi Takada, Yoshiharu Aimoto, Koichiro Furuta, Mamoru Fujita, Takanori Saeki, Hiroshi Sugawara, Tatsunori Murotani, Naoki Kasai, Kentaro Shibahara, Ken Nakajima, Hiromitsu Hada, Takehiko Hamada, Naoaki Aizaki, Takemitsu Kunio, Eiichiro Kakehashi, Katsuhiro Masumori, Takaho Tanigawa

IEEE J. Solid State Circuits, November, 1993

1992

A 30-ns 64-Mb DRAM with built-in self-test and self-repair function.

Akira Tanabe, Toshio Takeshima, Hiroki Koike, Yoshiharu Aimoto, Masahide Takada, Toshiyuki Ishijima, Naoki Kasai, Hiromitsu Hada, Kentaro Shibahara, Takemitsu Kunio, Takaho Tanigawa, Takanori Saeki, Masato Sakao, Hidenobu Miyamoto, Hiroshi Nozue, Shuichi Ohya, Tatsunori Murotani, Kuniaki Koyama, Takashi Okuda

IEEE J. Solid State Circuits, November, 1992

1990

A 55-ns 16-Mb DRAM with built-in self-test function using microprogram ROM.

Toshio Takeshima, Masahide Takada, Hiroki Koike, Hiroshi Watanabe, Shigeru Koshimaru, Kenjiro Mitake, Wataru Kikuchi, Takaho Tanigawa, Tatsunori Murotani, Kenji Noda, Kazuhiro Tasaka, Koji Yamanaka, Kuniaki Koyama

IEEE J. Solid State Circuits, August, 1990