Che-Wei Wu

According to our database1, Che-Wei Wu authored at least 9 papers between 2011 and 2014.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2014
A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips.
Proceedings of the 2014 IEEE Asia Pacific Conference on Circuits and Systems, 2014

2013
A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro.
IEEE J. Solid State Circuits, 2013

An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory.
IEEE J. Solid State Circuits, 2013

A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes.
IEEE J. Solid State Circuits, 2013

Degradation algorithm of compressive sensing for integer DCT with application to H. 264/AVC.
Proceedings of the International Symposium on Intelligent Signal Processing and Communication Systems, 2013

2012
Low Store Energy, Low VDDmin, 8T2R Nonvolatile Latch and SRAM With Vertical-Stacked Resistive Memory (Memristor) Devices for Low Power Mobile Applications.
IEEE J. Solid State Circuits, 2012

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011


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