Chorng-Jung Lin

According to our database, Chorng-Jung Lin authored at least 8 papers between 2011 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors.

Cheng-Xin Xue, Wei-Hao Chen, Je-Syu Liu, Jia-Fang Li, Wei-Yu Lin, Wei-En Lin, Jing-Hong Wang, Wei-Chen Wei, Ting-Wei Chang, Tung-Cheng Chang, Tsung-Yuan Huang, Hui-Yao Kao, Shih-Ying Wei, Yen-Cheng Chiu, Chun-Ying Lee, Chung-Chuan Lo, Ya-Chin King, Chorng-Jung Lin, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors.

Wei-Hao Chen, Kai-Xiang Li, Wei-Yu Lin, Kuo-Hsiang Hsu, Pin-Yi Li, Cheng-Han Yang, Cheng-Xin Xue, En-Yu Yang, Yen-Kai Chen, Yun-Sheng Chang, Tzu-Hsiang Hsu, Ya-Chin King, Chorng-Jung Lin, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2014

Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme.

Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, Yu-Der Chih

IEEE J. Solid State Circuits, 2014

19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme.

Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Tsung-Yung Jonathan Chang

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013

A Low-Voltage Bulk-Drain-Driven Read Scheme for Sub-0.5 V 4 Mb 65 nm Logic-Process Compatible Embedded Resistive RAM (ReRAM) Macro.

Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Sue-Meng Yang, Ku-Feng Lin, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih

IEEE J. Solid State Circuits, 2013

An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory.

Meng-Fan Chang, Shin-Jang Shen, Chia-Chi Liu, Che-Wei Wu, Yu-Fan Lin, Ya-Chin King, Chorng-Jung Lin, Hung-Jen Liao, Yu-Der Chih, Hiroyuki Yamauchi

IEEE J. Solid State Circuits, 2013

2012

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.

Meng-Fan Chang, Che-Wei Wu, Chia-Chen Kuo, Shin-Jang Shen, Ku-Feng Lin, Shu-Meng Yang, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011

An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory.

Meng-Fan Chang, Shin-Jang Shen, Chia-Chi Liu, Che-Wei Wu, Yu-Fan Lin, Shang-Chi Wu, Chia-En Huang, Han-Chao Lai, Ya-Chin King, Chorng-Jung Lin, Hung-Jen Liao, Yu-Der Chih, Hiroyuki Yamauchi

Proceedings of the IEEE International Solid-State Circuits Conference, 2011