Ling Yang

According to our database, Ling Yang authored at least 11 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT.

Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

2024

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias.

Qing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma

Sci. China Inf. Sci., 2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.

Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation.

Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

2022

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.

Yuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang, Jiangyi Shi, Yue Hao

IEEE Trans. Instrum. Meas., 2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao

Sci. China Inf. Sci., 2022

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.

Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021

Recent progress of integrated circuits and optoelectronic chips.

Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li

Sci. China Inf. Sci., 2021

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.

Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao

IEEE Access, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao

Proceedings of the IEEE International Reliability Physics Symposium, 2018