Xavier Aymerich
Orcid: 0000-0002-5874-6257
According to our database1,
Xavier Aymerich
authored at least 31 papers
between 2001 and 2019.
Collaborative distances:
Collaborative distances:
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Bibliography
2019
IEEE Trans. Emerg. Top. Comput., 2019
2018
Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization.
Proceedings of the Conference on Design of Circuits and Integrated Systems, 2018
2015
Threshold voltage and on-current Variability related to interface traps spatial distribution.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2013
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs.
Microelectron. Reliab., 2013
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications.
Microelectron. Reliab., 2013
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.
Microelectron. Reliab., 2013
2012
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO<sub>2</sub>/Pt structures.
Microelectron. Reliab., 2012
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs.
Microelectron. Reliab., 2012
Unified characterization of RTN and BTI for circuit performance and variability simulation.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012
2010
SPICE modelling of hot-carrier degradation in Si<sub>1-</sub><sub>x</sub>Ge<sub>x</sub> S/D and HfSiON based pMOS transistors.
Microelectron. Reliab., 2010
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.
Microelectron. Reliab., 2010
2009
Trapped charge and stress induced leakage current (SILC) in tunnel SiO<sub>2</sub> layers of de-processed MOS non-volatile memory devices observed at the nanoscale.
Microelectron. Reliab., 2009
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses.
Microelectron. Reliab., 2009
2008
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors.
Microelectron. Reliab., 2008
2007
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.
Microelectron. Reliab., 2007
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.
Microelectron. Reliab., 2007
Influence of the SiO<sub>2</sub> layer thickness on the degradation of HfO<sub>2</sub>/SiO<sub>2</sub> stacks subjected to static and dynamic stress conditions.
Microelectron. Reliab., 2007
2006
Microelectron. Reliab., 2006
2005
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics.
Microelectron. Reliab., 2005
Breakdown spots of ultra-thin (EOT<1.5nm) HfO<sub>2</sub>/SiO<sub>2</sub> stacks observed with enhanced - CAFM.
Microelectron. Reliab., 2005
Pre- and post-BD electrical conduction of stressed HfO<sub>2</sub>/SiO<sub>2</sub> MOS gate stacks observed at the nanoscale.
Microelectron. Reliab., 2005
2004
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses.
Microelectron. Reliab., 2004
Microelectron. Reliab., 2004
2003
The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips.
IEEE Trans. Instrum. Meas., 2003
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectron. Reliab., 2003
Pre-breakdown noise in electrically stressed thin SiO<sub>2</sub> layers of MOS devices observed with C-AFM.
Microelectron. Reliab., 2003
2002
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO<sub>2</sub> Gate Oxide on MOS Structures.
Microelectron. Reliab., 2002
2001
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<sub>2</sub> films.
Microelectron. Reliab., 2001
Local current fluctuations before and after breakdown of thin SiO<sub>2</sub> films observed with conductive atomic force microscope.
Microelectron. Reliab., 2001
Microelectron. Reliab., 2001