Qingzhu Zhang

According to our database, Qingzhu Zhang authored at least 18 papers between 2014 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well.

Qingkun Li, Qingzhu Zhang, Lei Cao, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2025

Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance.

Lianlian Li, Lei Cao, Xuexiang Zhang, Qingkun Li, Zhenhua Wu, Meihe Zhang, Yunjiao Bao, Peng Wang, Renjie Jiang, Anyan Du, Qingzhu Zhang, Huaxiang Yin

Microelectron. J., 2025

Immersive AI-Powered Language Learning Experience in Virtual Reality: A Gamified Environment for Japanese Learning.

Qingzhu Zhang

Proceedings of the IEEE Conference on Virtual Reality and 3D User Interfaces, 2025

2024

Disentangling the Influential Factors Driving NPP Decrease in Shandong Province: An Analysis from Time Series Evaluation Using MODIS and CASA Model.

Guangyu Lv, Xuan Li, Lei Fang, Yanbo Peng, Chuanxing Zhang, Jianyu Yao, Shilong Ren, Jinyue Chen, Jilin Men, Qingzhu Zhang, Guoqiang Wang, Qiao Wang

Remote. Sens., June, 2024

Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors.

Qingkun Li, Lei Cao, Qingzhu Zhang, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2024

Dynamic-Attention-based EEG State Transition Modeling for Emotion Recognition.

Xinke Shen, Runmin Gan, Kaixuan Wang, Shuyi Yang, Qingzhu Zhang, Quanying Liu, Dan Zhang, Sen Song

CoRR, 2024

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.

Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Huan Liu, Genquan Han, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., 2024

2023

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.

Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin

Microelectron. J., November, 2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., October, 2023

2022

Deep Learning-Based Water Quality Retrieval in an Impounded Lake Using Landsat 8 Imagery: An Application in Dongping Lake.

Hanwen Zhang, Baolin Xue, Guoqiang Wang, Xiaojing Zhang, Qingzhu Zhang

Remote. Sens., 2022

Compound Label Learning for Affective Image Content Analysis.

Qingzhu Zhang, Tongtong Yuan

Proceedings of the Artificial Intelligence - Second CAAI International Conference, 2022

2021

Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.

Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu

Microelectron. J., 2021

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.

Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Process variation dependence of total ionizing dose effects in bulk nFinFETs.

Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang

Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.

Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin

Microelectron. Reliab., 2018

2014

Ab <i>intio</i> Investigation of the Thermochemistry and Kinetics of the SO₂ + O₃^- → SO₃^- + O₂ Reaction in Aircraft Engines and the Environment.

Xuechao Guo, Alexey B. Nadykto, Yisheng Xu, Qingzhu Zhang, Jingtian Hu

Entropy, 2014