Sunghoi Hur

According to our database, Sunghoi Hur authored at least 16 papers between 2023 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

30.1 A 28Gb/mm²4XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs.

Sang-Soo Park, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chungho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Hojoon Kim, Daein Lee, Donghyun Seo, Byungrok Go, Seoyoon Jeon, Yoonjee Kim, Doo-Hyun Kim, Youngmin Jo, Hyun-Jun Yoon, Junehong Park, In-Mo Kim, Sunghoon Kim, Hokil Lee, Je-Hyeon Yu, Sanglok Kim, Hwan-Seok Ku, Jungmin Seo, Jindo Byun, Seunghyeon Yun, Kyoungtae Kang, Seung-Beom Kim, Yohan Lee, Yongkyu Lee, Kyung-Hwa Kang, Hanjun Lee, YoungHwan Ryu, Hyundo Kim, Wontae Kim, Hyeongdo Choi, Juho Jeon, Ansoo Park, Raehyun Song, Jae-Hwan Kim, Jungsoo Kim, Hwaseok Lee, Mookyung Lee, Jae-Ick Son, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Hyuckjoon Kwon, Youngdon Choi, Chiweon Yoon, Seungjae Lee, Kiwhan Song, Sunghoi Hur

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

New Burnout Failure at the Chip Edge: Analysis and Preventive Design by a Novel Experimental Approach.

Seungmin Lee, Taegon Lee, Gaeun Kim, Kwang-Ryul Lee, Eunji An, Sekwon Hong, Sungjun Kim, Soonkwan Kang, Seokwoo Hong, Hwan Cha, Minkyu Kang, Jaesun Yun, Moongeun Kim, Woongseop Lee, Joonsung Lim, Joonyoung Oh, Kyungyoon Noh, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Innovative V-NAND Flash Structure with Dual Trap Layer for Future Generations of Multi-Bit Device.

Jeongyoon Yeo, Joonsung Kim, Younghwan Son, Taein Lee, Sejun Park, Min-Kyu Jeong, Jung Hoon Lee, Suk-Kang Sung, Dongku Kang, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE International Memory Workshop, 2025

First Demonstration of Threshold Voltage Modeling in Multi-Hole V-NAND Flash Architecture with Noncircular Channel Hole Profiles.

Chanyang Park, Min-Kyu Jeong, Taein Lee, Sejun Park, Jung Hoon Lee, Yujin Lee, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE International Memory Workshop, 2025

Development of Innovative Self-Aligned SSL Mold (SASM) Scheme with Remarkable Reduction of Chip Size.

Junyoung Lee, Minkyu Jeong, Sejun Park, Joonam Kim, Joonghyeob Shin, Jongyoon Choi, Jihoon Choi, Byungsoo Kim, Yujeong Seo, Gilsung Lee, Dongsik Lee, Joon Kim, Suk-Kang Sung, Byoungil Lee, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE International Memory Workshop, 2025

On-Chip Capacitors with Wall-Type Structure in 9th Generation 3D VNAND Flash Memory.

Taegon Lee, Ji-Eun Ha, Kang-In Lee, Jung-Hwan Lee, Hyung-Geun Yook, In-Chul Shin, Jang-Hwan Jeong, Minkyu Kang, Joonsung Lim, Kyungyoon Noh, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE International Memory Workshop, 2025

2024

Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory.

Hang-Ah Park, Sejun Park, Min-Tai Yu, Ye-Chan Kim, Cheon Ho Park, Jung Hoon Lee, Jun Eon Jin, Dawoon Jeung, Hauk Han, Tai-Soo Lim, Min-Kyu Jeong, Mincheol Park, Bong-Tae Park, Sunghoi Hur

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory.

Sehoon Lee, Jieun Lee, Sungpil Jang, Sujeong Kim, Choelgyu Kim, Narae Jeong Sae-Jin Kim, Jisoo Kang, Juhee Hong, Dong-Kyu Kim, Junhee Lim, Sejun Park, Seungwan Hong, Sunghoi Hur

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.

Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam-Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, Sunghoi Hur

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

NORNS: Three Guides for Efficient Automatic Post-Fabrication Optimization of Modern NAND Flash Memory.

Earl Kim, Hyunuk Cho, Sungjun Cho, Myungsuk Kim, Jisung Park, Jaeyong Jeong, Eunkyoung Kim, Sunghoi Hur

Proceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design, 2024

2023

Kernel Smoothing Technique Based on Multiple-Coordinate System for Screening Potential Failures in NAND Flash Memory.

Gooyoung Kim, Youngseon Moon, Jongmin Kim, Jaeyong Jeong, Eun-Kyoung Kim, Sunghoi Hur

Proceedings of the 41st IEEE VLSI Test Symposium, 2023

Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory.

Changhwan Lee, Min-Tai Yu, Sejun Park, Hoki Lee, Bio Kim, Suhwan Lim, Jaeduk Lee, Sung-Hun Lee, Mincheol Park, Sujin Ahn, Sunghoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash.

Kyungmoon Kim, Yujeong Seo, Sejun Park, Woojae Jang, Dongho Yoo, Joonsung Lim, Il-Han Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A 3.0 Gb/s/pin 4^th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.

Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, Sunghoi Hur

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND.

Suhwan Lim, Samki Kim, Changhee Lee, Hyeongwon Choi, Nambin Kim, Jaehun Jung, Hanvit Yang, Tae-Hun Kim, Junhee Lim, Daewon Ha, Sunghoi Hur, Jae-hoon Jang, Yu-Gyun Shin, Jaihyuk Song

Proceedings of the IEEE International Memory Workshop, 2023

Process Improvements for 7^th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production.

Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur

Proceedings of the IEEE International Memory Workshop, 2023