Jaekwan Kim
Affiliations:- Samsung Electronics, Hwasung, Korea
According to our database1,
Jaekwan Kim
authored at least 4 papers
between 2005 and 2009.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2009
BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel.
IEEE J. Solid State Circuits, 2009
2006
A 512-mb DDR3 SDRAM prototype with C<sub>IO</sub> minimization and self-calibration techniques.
IEEE J. Solid State Circuits, 2006
An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006
2005
A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems.
IEEE J. Solid State Circuits, 2005