S. Iacovo

According to our database, S. Iacovo authored at least 2 papers in 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.

Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, Filip Schleicher, F. Sebaai, Yusuke Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections.

A. Vandooren, N. Parihar, Jacopo Franco, Roger Loo, Hiroaki Arimura, R. Rodriguez, F. Sebaai, S. Iacovo, Kevin Vandersmissen, W. Li, G. Mannaert, D. Radisic, E. Rosseel, Andriy Hikavyy, Anne Jourdain, O. Mourey, G. Gaudin, Shay Reboh, L. Le Van-Jodin, Guillaume Besnard, C. Roda Neve, Bich-Yen Nguyen, Iuliana P. Radu, E. Dentoni Litta, N. Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022