Gaspard Hiblot

According to our database, Gaspard Hiblot authored at least 10 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology.

S. Yang, Pieter Schuddinck, Marie Garcia Bardon, Yang Xiang, Anabela Veloso, B. T. Chan, Gioele Mirabelli, Gaspard Hiblot, Geert Hellings, Julien Ryckaert

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Towards Chip-Package-System Co-optimization of Thermally-limited System-On-Chips (SOCs).

Subrat Mishra, Sankatali Venkateswarlu, Bjorn Vermeersch, Moritz Brunion, Melina Lofrano, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Gaspard Hiblot, Geert Van der Plas, Pieter Weckx, Geert Hellings, James Myers, Francky Catthoor, Julien Ryckaert

Proceedings of the IEEE International Reliability Physics Symposium, 2023

NPN Si/SiGe memory selector with non-linearity>10⁵ and ON-current>6MA/cm².

Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.

Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

Process-induced charging damage in IGZO nTFTs.

Gaspard Hiblot, Nouredine Rassoul, Lieve Teugels, Katia Devriendt, Adrian Vaisman Chasin, Michiel van Setten, Attilio Belmonte, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Study of the Mechanical Stress Impact on Silicide Contact Resistance by 4-Point Bending.

Yefan Liu, Hao Yu, Gaspard Hiblot, Anastasiia Kruv, Marc Schaekers, Naoto Horiguchi, Dimitrios Velenis, Ingrid De Wolf

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Comparative Analysis of the Degradation Mechanisms in Logic and I/O FinFET Devices Induced by Plasma Damage.

Gaspard Hiblot, Yefan Liu, Geert Hellings, Geert Van der Plas

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Impact of short-channel effects on velocity overshoot in MOSFET.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the IEEE 13th International New Circuits and Systems Conference, 2015

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR.

Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.

Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014