B. T. Chan

According to our database, B. T. Chan authored at least 7 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology.

S. Yang, Pieter Schuddinck, Marie Garcia Bardon, Yang Xiang, Anabela Veloso, B. T. Chan, Gioele Mirabelli, Gaspard Hiblot, Geert Hellings, Julien Ryckaert

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.

Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Y. Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.

Hiroaki Arimura, S. Brus, Jacopo Franco, Y. Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, N. Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails.

Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories.

Romain Ritzenthaler, Elena Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process.

Nard I. Dumoulin Stuyck, Roy Li, Clement Godfrin, Asser Elsayed, Stefan Kubicek, Julien Jussot, B. T. Chan, Fahd A. Mohiyaddin, Mohamed Shehata, George Simion, Yann Canvel, Ludovic Goux, Heyns Heyns, Bogdan Govoreanu, Iuliana P. Radu

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing.

Iuliana P. Radu, Roy Li, Anton Potocnik, Tsvetan Ivanov, Danny Wan, Stefan Kubicek, Nard I. Dumoulin Stuyck, Jeroen Verjauw, Julien Jussot, Yann Canvel, Clement Godfrin, Massimo Mongillo, Rohith Acharya, Asser Elsayed, Mohamed Shehata, Xiaoyu Piao, Antoine Pacco, Laurent Souriau, Sebastien Couet, B. T. Chan, Jan Craninckx, Bertrand Parvais, Alexander Grill, Subramanian Narasimhamoorthy, Steven Van Winckel, Steven Brebels, Fahd A. Mohiyaddin, George Simion, Bogdan Govoreanu

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021