Kijoon Kim

According to our database, Kijoon Kim authored at least 10 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers.

Minji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Suman Datta, Asif Khan, Shimeng Yu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention.

Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage.

Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection.

Sizhe Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao, Jiahui Duan, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Comparative Study of Channel Materials for Ferroelectric NAND Applications.

Lance Fernandes, Prasanna Venkatesan Ravindran, Mengkun Tian, Yu-Hsin Kuo, Nashrah Afroze, Salma Soliman, Sanghyun Kang, Dyutimoy Chakraborty, Taeyoung Song, Chengyang Zhang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan

Proceedings of the IEEE International Memory Workshop, 2025

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

In-depth Analysis of the Hafnia Ferroelectrics as a Key Enabler for Low Voltage & QLC 3D VNAND Beyond 1K Layers: Experimental Demonstration and Modeling.

Giuk Kim, Hyojun Choi, Hunbeom Shin, Sangho Lee, Sangmok Lee, Yunseok Nam, Minhyun Jung, Ilho Myeong, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Jinho Ahn, Sanghun Jeon

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND.

Ilho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Jinseong Heo

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET.

Taeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun Jae Lee, Duk-Hyun Choe, Seung-Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan

Proceedings of the IEEE International Memory Workshop, 2024