Marc Aoulaiche

According to our database, Marc Aoulaiche authored at least 11 papers between 2007 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Overview of 3D NAND Technologies and Outlook Invited Paper.

Srinath Venkatesan, Marc Aoulaiche

Proceedings of the Non-Volatile Memory Technology Symposium, 2018

2015

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.

Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Assessment of SiGe quantum well transistors for DRAM peripheral applications.

Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.

Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Off-state stress degradation mechanism on advanced p-MOSFETs.

Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.

Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys

Microelectron. Reliab., 2014

Impact of Off State Stress on advanced high-K metal gate NMOSFETs.

Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh

Proceedings of the European Solid-State Device Research Conference, 2013

2012

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.

Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2007

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.

A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl

Microelectron. Reliab., 2007

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.

M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns

Microelectron. Reliab., 2007