Pierre Fazan

According to our database, Pierre Fazan authored at least 11 papers between 2005 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories.

Romain Ritzenthaler, Elena Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.

J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.

Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.

Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Assessment of SiGe quantum well transistors for DRAM peripheral applications.

Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.

Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Off-state stress degradation mechanism on advanced p-MOSFETs.

Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2013

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh

Proceedings of the European Solid-State Device Research Conference, 2013

2012

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.

Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.

Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2005

Zero capacitor embedded memory technology for system on chip.

Serguei Okhonin, Pierre Fazan, Mark-Eric Jones

Proceedings of the 13th IEEE International Workshop on Memory Technology, 2005