Anda Mocuta

According to our database, Anda Mocuta authored at least 17 papers between 2005 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.

Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.

Trong Huynh Bao, Anabela Veloso, Sushil Sakhare, Philippe Matagne, Julien Ryckaert, Manu Perumkunnil, Davide Crotti, Farrukh Yasin, Alessio Spessot, Arnaud Furnémont, Gouri Sankar Kar, Anda Mocuta

Proceedings of the 56th Annual Design Automation Conference 2019, 2019

2018

New methodology for modelling MOL TDDB coping with variability.

Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

SRAM designs for 5nm node and beyond: Opportunities and challenges.

Trong Huynh Bao, Sushil Sakhare, Julien Ryckaert, Alessio Spessot, Diederik Verkest, Anda Mocuta

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

Dedicated technology threshold voltage tuning for 6T SRAM beyond N7.

Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7.

Mohit Kumar Gupta, Pieter Weckx, Stefan Cosemans, Pieter Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, Alessio Spessot, Anda Mocuta, Wim Dehaene

Proceedings of the 47th European Solid-State Device Research Conference, 2017

On the ballistic ratio in 14nm-Node FinFETs.

F. M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors.

Devin Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Towards high performance sub-10nm finW bulk FinFET technology.

Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Impact of fin shape variability on device performance towards 10nm node.

Kazuyuki Tomida, Keizo Hiraga, Morin Dehan, Geert Hellings, Doyoung Jang, Kenichi Miyaguchi, Thomas Chiarella, Minsoo Kim, Anda Mocuta, Naoto Horiguchi, Abdelkarim Mercha, Diederik Verkest, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Assessment of SiGe quantum well transistors for DRAM peripheral applications.

Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.

Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Nonparabolicity and confinement effects of IIIV materials in novel transistors.

M. Ali Pourghaderi, Anda Mocuta, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Modeling FinFET metal gate stack resistance for 14nm node and beyond.

Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below.

Geert Eneman, An De Keersgieter, Anda Mocuta, Nadine Collaert, Aaron Thean

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Holisitic device exploration for 7nm node.

Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, An Steegen

Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2005

Direct Temperature Measurement for VLSI Circuits and 3-D Modeling of Self-Heating in Sub-0.13 mum SOI Technologies.

Rajiv V. Joshi, S. S. Kang, N. Zamdmar, Anda Mocuta, Ching-Te Chuang, J. A. Pascual-Gutiérrez

Proceedings of the 18th International Conference on VLSI Design (VLSI Design 2005), 2005