Simon Van Beek

According to our database, Simon Van Beek authored at least 14 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

MTJ degradation in multi-pillar SOT-MRAM with selective writing.

Simon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Vaisman Chasin, Sebastien Couet

Proceedings of the IEEE International Reliability Physics Symposium, 2023

STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes.

Fernando García-Redondo, S. Rao, M. Gupta, Manu Perumkunnil, Y. Xiang, D. Abdi, Simon Van Beek, S. Couet, Marie Garcia Bardon

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Selective operations of multi-pillar SOT-MRAM for high density and low power embedded memories.

Kaiming Cai, Simon Van Beek, Siddharth Rao, K. Fan, M. Gupta, V. D. Nguyen, Ganesh Jayakumar, Giacomo Talmelli, S. Couet, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

MTJ degradation in SOT-MRAM by self-heating-induced diffusion.

Simon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Vaisman Chasin, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution.

Simon Van Beek, Siddharth Rao, Shreya Kundu, Woojin Kim, Barry J. O'Sullivan, Stefan Cosemans, Farrukh Yasin, Robert Carpenter, Sebastien Couet, Shamin H. Sharifi, Nico Jossart, Davide Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2021

STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application.

Sidharth Rao, Woojin Kim, Simon Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Farrukh Yasin, Sebastien Couet, Robert Carpenter, Barry J. O'Sullivan, Shamin H. Sharifi, N. Jossart, Laurent Souriau, Ludovic Goux, Dimitri Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2021

2020

Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs.

Simon Van Beek, Barry J. O'Sullivan, Sebastien Couet, Davide Crotti, Dimitri Linten, Gouri Sankar Kar

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V_G, V_D} bias space.

Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

SOT-MRAM 300mm integration for low power and ultrafast embedded memories.

Kevin Garello, Farrukh Yasin, S. Couet, Laurent Souriau, Johan Swerts, Sidharth Rao, Simon Van Beek, Wonsub Kim, Enlong Liu, Shreya Kundu, Diana Tsvetanova, N. Jossart, Kris Croes, E. Grimaldi, M. Baumgartner, D. Crotti, Arnaud Furnémont, Pietro Gambardella, Gouri Sankar Kar

CoRR, 2018

SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories.

Kevin Garello, Kevin Garello Yasin, S. Couet, Laurent Souriau, Johan Swerts, Sidharth Rao, Simon Van Beek, Wonsub Kim, Enlong Liu, Shreya Kundu, Diana Tsvetanova, Kris Croes, N. Jossart, E. Grimaldi, M. Baumgartner, D. Crotti, Arnaud Fumemont, Pietro Gambardella, Gouri Sankar Kar

Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.

Barry J. O'Sullivan, Simon Van Beek, Philippe J. Roussel, Sidharth Rao, Wonsub Kim, S. Couet, Johan Swerts, Farrukh Yasin, Dimitri Crotti, Dimitri Linten, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations.

Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Linten

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit.

Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar

Proceedings of the 48th European Solid-State Device Research Conference, 2018

2015

Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions.

Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2015