Yongliang Zhou

Orcid: 0000-0002-7327-6759

According to our database1, Yongliang Zhou authored at least 33 papers between 2010 and 2025.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2025
Full-Array Boolean Logic CIM Macro With Self-Recycling 10T-SRAM Cell for AES Systems.
IEEE Trans. Very Large Scale Integr. Syst., August, 2025

A high charge-discharge stability SRAM 10T1C XOR CIM macro applied in BCAM and Hamming distance.
Microelectron. J., 2025

MTJ based Temperature-Adaptive VCO (TAVCO) for Compensating CP-PLL Frequency Drift.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025

MTJ based temperature compensated beta multiplier Voltage Reference.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025

2024
Timing Optimization Model and PVT Tracked Scheme for STT-MRAM Voltage-Mode Sense.
IEEE Trans. Circuits Syst. I Regul. Pap., September, 2024

Low-Cost and Highly Robust Quadruple Node Upset Tolerant Latch Design.
IEEE Trans. Very Large Scale Integr. Syst., May, 2024

Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.
IEEE Trans. Very Large Scale Integr. Syst., April, 2024

A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.
IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024

An 8b-Precison 16-Kb FDSOI 8T SRAM CIM macro based on time-domain for energy-efficient edge AI devices.
Microelectron. J., 2024

Configurable in-memory computing architecture based on dual-port SRAM.
Microelectron. J., 2024

Ultra8T: A sub-threshold 8T SRAM with leakage detection.
Integr., 2024

A Timing-Shared Adaptive Sensing Methodology for Low-Voltage SRAM.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2024

2023
A Single-Ended Offset-Canceling Sense Amplifier Enabling Wide-Voltage Operations.
IEEE Trans. Circuits Syst. II Express Briefs, March, 2023

A 28nm Horizontal-Weight-Shift and Vertical-feature-Shift-Based Separate-WL 6T-SRAM Computation-in-Memory Unit-Macro for Edge Depthwise Neural-Networks.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

A 28nm 64-kb 31.6-TFLOPS/W Digital-Domain Floating-Point-Computing-Unit and Double-Bit 6T-SRAM Computing-in-Memory Macro for Floating-Point CNNs.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022
Writing-only in-MRAM computing paradigm for ultra-low power applications.
Microprocess. Microsystems, April, 2022

SNNIM: A 10T-SRAM based Spiking-Neural-Network-In-Memory architecture with capacitance computation.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

ShareFloat CIM: A Compute-In-Memory Architecture with Floating-Point Multiply-and-Accumulate Operations.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

A 22-nm FDSOI 8T SRAM Based Time-Domain CIM for Energy-Efficient DNN Accelerators.
Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

2021
Toward Energy-Efficient STT-MRAM Design With Multi-Modes Reconfiguration.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

A survey of in-spin transfer torque MRAM computing.
Sci. China Inf. Sci., 2021

Design Challenges and Methodology of High-Performance SRAM-Based Compute-in-Memory for AI Edge Devices.
Proceedings of the International Conference on UK-China Emerging Technologies, 2021

Design Methodology towards High-Precision SRAM based Computation-in-Memory for AI Edge Devices.
Proceedings of the 18th International SoC Design Conference, 2021

Challenge and Trend of SRAM Based Computation-in-Memory Circuits for AI Edge Devices.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2020
A Self-Timed Voltage-Mode Sensing Scheme With Successive Sensing and Checking for STT-MRAM.
IEEE Trans. Circuits Syst. I Fundam. Theory Appl., 2020

MTJ-LRB: Proposal of MTJ-Based Loop Replica Bitline as MRAM Device-Circuit Interaction for PVT-Robust Sensing.
IEEE Trans. Circuits Syst., 2020

Magnetic Tunnel Junction Applications.
Sensors, 2020

Interplay Bitwise Operation in Emerging MRAM for Efficient In-memory Computing.
CCF Trans. High Perform. Comput., 2020

2019
A Self-Timing Voltage-Mode Sense Amplifier for STT-MRAM Sensing Yield Improvement.
Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, 2019

2016
Robust activating timing for SRAM SA with replica cell voltage boosted circuit.
IEICE Electron. Express, 2016

2011
Rank-two residue iteration method for nonnegative matrix factorization.
Neurocomputing, 2011

2010
Analysis of how to use the GEB developing.
Proceedings of the International Conference on E-Business and E-Government, 2010


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