Dawit Burusie Abdi

Orcid: 0000-0002-3598-8798

According to our database1, Dawit Burusie Abdi authored at least 11 papers between 2021 and 2025.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2025
3D SRAM Disaggregation in Advanced CMOS Nodes using Hybrid Bonding Technology.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025

Design Technology Co-Optimization of 3D SRAM Macro in Nanosheet Technology for High-Bandwidth Applications.
Proceedings of the IEEE International Memory Workshop, 2025

2024
Ultra-Scaled E-Tree-Based SRAM Design and Optimization With Interconnect Focus.
IEEE Trans. Circuits Syst. I Regul. Pap., October, 2024

Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5).
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

On-chip Memory in Accelerator-based Systems: A System Technology Co-Optimization (STCO) Perspective for Emerging Device Technologies.
Proceedings of the 37th IEEE International System-on-Chip Conference, 2024

Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Scaling NVMs in Event-Driven Architectures for Edge Inference.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems, 2024

2023
3D SRAM Macro Design in 3D Nanofabric Process Technology.
IEEE Trans. Circuits Syst. I Regul. Pap., July, 2023

Towards Chip-Package-System Co-optimization of Thermally-limited System-On-Chips (SOCs).
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021
Drain Induced Barrier Widening and Reverse Short Channel Effects in Tunneling FETs: Investigation and Analysis.
IEEE Access, 2021

Effect of Drain Induced Barrier Enhancement on Subthreshold Swing and OFF-State Current of Short Channel MOSFETs: A TCAD Study.
IEEE Access, 2021


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