Ki Chul Chun

Orcid: 0000-0001-5187-0514

According to our database1, Ki Chul Chun authored at least 17 papers between 2009 and 2021.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2021
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme.
IEEE J. Solid State Circuits, 2021

An In-DRAM BIST for 16 Gb DDR4 DRAM in the 2nd 10-nm-Class DRAM Process.
IEEE Access, 2021

2020

2018

2014
A Bit-by-Bit Re-Writable Eflash in a Generic 65 nm Logic Process for Moderate-Density Nonvolatile Memory Applications.
IEEE J. Solid State Circuits, 2014

2013
A Write-Back-Free 2T1D Embedded DRAM With Local Voltage Sensing and a Dual-Row-Access Low Power Mode.
IEEE Trans. Circuits Syst. I Regul. Pap., 2013

A Logic-Compatible Embedded Flash Memory for Zero-Standby Power System-on-Chips Featuring a Multi-Story High Voltage Switch and a Selective Refresh Scheme.
IEEE J. Solid State Circuits, 2013

A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory.
IEEE J. Solid State Circuits, 2013

A bit-by-bit re-writable Eflash in a generic logic process for moderate-density embedded non-volatile memory applications.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

2012
A 667 MHz Logic-Compatible Embedded DRAM Featuring an Asymmetric 2T Gain Cell for High Speed On-Die Caches.
IEEE J. Solid State Circuits, 2012

A 2T1C Embedded DRAM Macro With No Boosted Supplies Featuring a 7T SRAM Based Repair and a Cell Storage Monitor.
IEEE J. Solid State Circuits, 2012

A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme.
Proceedings of the Symposium on VLSI Circuits, 2012

2011
A 3T Gain Cell Embedded DRAM Utilizing Preferential Boosting for High Density and Low Power On-Die Caches.
IEEE J. Solid State Circuits, 2011

A 700MHz 2T1C embedded DRAM macro in a generic logic process with no boosted supplies.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

2010
Variation aware performance analysis of gain cell embedded DRAMs.
Proceedings of the 2010 International Symposium on Low Power Electronics and Design, 2010

Logic-compatible embedded DRAM design for memory intensive low power systems.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010

2009
A 0.9V, 65nm logic-compatible embedded DRAM with > 1ms data retention time and 53% less static power than a power-gated SRAM.
Proceedings of the 2009 International Symposium on Low Power Electronics and Design, 2009


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