Seouk-Kyu Choi
Affiliations:- Samsung, South Korea
According to our database1,
Seouk-Kyu Choi
authored at least 10 papers
between 2016 and 2022.
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Bibliography
2022
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques.
IEEE J. Solid State Circuits, 2021
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme.
IEEE J. Solid State Circuits, 2021
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3<sup>rd</sup>-Generation 10nm DRAM.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking.
IEEE J. Solid State Circuits, 2019
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2018
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2016
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016