Lorenzo Ciampolini

According to our database, Lorenzo Ciampolini authored at least 15 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

An Automated Design Methodology for Computational SRAM Dedicated to Highly Data-Centric Applications: Invited Paper.

A. Philippe, Lorenzo Ciampolini, A. Philippe, M. Gerbaud, M. Ramirez-Corrales, Valentin Egloff, Bastien Giraud, Jean-Philippe Noël

Proceedings of the 24th ACM/IEEE Workshop on System Level Interconnect Pathfinding, 2022

2021

A Near-Instantaneous and Non-Invasive Erasure Design Technique to Protect Sensitive Data Stored in Secure SRAMs.

Jean-Philippe Noel, M. Pezzin, Jean-Frédéric Christmann, Lorenzo Ciampolini, M. Le Coadou, M. Diallo, Florent Lepin, B. Blampey, Simone Bacles-Min, R. Wacquez, Bastien Giraud

Proceedings of the 47th ESSCIRC 2021, 2021

Storage Class Memory with Computing Row Buffer: A Design Space Exploration.

Valentin Egloff, Jean-Philippe Noel, Maha Kooli, Bastien Giraud, Lorenzo Ciampolini, Roman Gauchi, César Fuguet Tortolero, Eric Guthmuller, Mathieu Moreau, Jean-Michel Portal

Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2021

2018

A 128 kb 7T SRAM Using a Single-Cycle Boosting Mechanism in 28-nm FD-SOI.

Babak Mohammadi, Oskar Andersson, Joseph Nguyen, Lorenzo Ciampolini, Andreia Cathelin, Joachim Neves Rodrigues

IEEE Trans. Circuits Syst. I Regul. Pap., 2018

2017

High-yield design of high-density SRAM for low-voltage and low-leakage operations.

Kedar Janardan Dhori, Hitesh Chawla, Ashish Kumar, Prashant Pandey, Promod Kumar, Lorenzo Ciampolini, Florian Cacho, Damien Croain

Proceedings of the IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2017

2016

28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.

Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs.

Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo

Proceedings of the 25th IEEE North Atlantic Test Workshop, 2016

Efficient yield estimation through generalized importance sampling with application to NBL-assisted SRAM bitcells.

Lorenzo Ciampolini, Jean-Christophe Lafont, Faress Tissafi Drissi, Jean-Paul Morin, David Turgis, Xavier Jonsson, Cyril Desclèves, Joseph Nguyen

Proceedings of the 35th International Conference on Computer-Aided Design, 2016

A 128 kb single-bitline 8.4 fJ/bit 90MHz at 0.3V 7T sense-amplifierless SRAM in 28 nm FD-SOI.

Babak Mohammadi, Oskar Andersson, Joseph Nguyen, Lorenzo Ciampolini, Andreia Cathelin, Joachim Neves Rodrigues

Proceedings of the ESSCIRC Conference 2016: 42^nd European Solid-State Circuits Conference, 2016

2015

Design and performance parameters of an ultra-low voltage, single supply 32bit processor implemented in 28nm FDSOI technology.

Sylvain Clerc, Fady Abouzeid, Darayus Adil Patel, Jean-Marc Daveau, Cyril Bottoni, Lorenzo Ciampolini, Fabien Giner, David Meyer, Robin Wilson, Philippe Roche, Sylvie Naudet, Arnaud Virazel, Alberto Bosio, Patrick Girard

Proceedings of the Sixteenth International Symposium on Quality Electronic Design, 2015

2014

Scalable 0.35 V to 1.2 V SRAM Bitcell Design From 65 nm CMOS to 28 nm FDSOI.

Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Anis Feki, Sylvain Clerc, Lorenzo Ciampolini, Fabien Giner, Robin Wilson, Philippe Roche

IEEE J. Solid State Circuits, 2014

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.

Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI.

Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo

Proceedings of the 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI.

Fady Abouzeid, Audrey Bienfait, Kaya Can Akyel, Sylvain Clerc, Lorenzo Ciampolini, Philippe Roche

Proceedings of the ESSCIRC 2013, 2013

2012

Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell.

Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Lorenzo Ciampolini

Proceedings of the International SoC Design Conference, 2012