In-Mo Kim

According to our database¹, In-Mo Kim authored at least 8 papers between 2011 and 2025.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book

In proceedings

Article

PhD thesis

Dataset

Other

Links

On csauthors.net:

Bibliography

2025

30.1 A 28Gb/mm<sup>2</sup>4XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2021

A 512Gb 3b/Cell 7<sup>th</sup> -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2017

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2017

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

[BibT_eX]

[DOI]

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2016

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.

[BibT_eX]

[DOI]

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2011

A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2011

In-Mo Kim

Timeline

Legend:

Links

On csauthors.net:

Bibliography

Loading...