Hans Mertens

According to our database, Hans Mertens authored at least 13 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.

Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Y. Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper.

Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability challenges in Forksheet Devices: (Invited Paper).

Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.

Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

The properties, effect and extraction of localized defect profiles from degraded FET characteristics.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Full (V_g, V_d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2019

CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.

Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.

Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017

Isolation of nanowires made on bulk wafers by ground plane doping.

Romain Ritzenthaler, Hans Mertens, An De Keersgieter, Jérôme Mitard, Dan Mocuta, N. Horiguchi

Proceedings of the 47th European Solid-State Device Research Conference, 2017

PPAC scaling enablement for 5nm mobile SoC technology.

Mustafa Badaroglu, Jeff Xu, John Zhu, Da Yang, Jerry Bao, Seung Chul Song, Peijie Feng, Romain Ritzenthaler, Hans Mertens, Geert Eneman, Naoto Horiguchi, Jeffrey Smith, Suman Datta, David Kohen, Po-Wen Chan, Keagan Chen, P. R. Chidi Chidambaram

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.

Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Lateral NWFET optimization for beyond 7nm nodes.

Dmitry Yakimets, Doyoung Jang, Praveen Raghavan, Geert Eneman, Hans Mertens, P. Schuddinck, Arindam Mallik, Marie Garcia Bardon, Nadine Collaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Kristin De Meyer

Proceedings of the 2015 International Conference on IC Design & Technology, 2015