William R. Reohr

According to our database, William R. Reohr authored at least 11 papers between 1993 and 2011.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2011

A 45 nm SOI Embedded DRAM Macro for the POWER™ Processor 32 MByte On-Chip L3 Cache.

John Barth, Don Plass, Erik Nelson, Charlie Hwang, Gregory Fredeman, Michael A. Sperling, Abraham Mathews, Toshiaki Kirihata, William R. Reohr, Kavita Nair, Nianzheng Cao

IEEE J. Solid State Circuits, 2011

2010

A 45nm SOI embedded DRAM macro for POWER7TM 32MB on-chip L3 cache.

John Barth, Don Plass, Erik Nelson, Charlie Hwang, Gregory Fredeman, Michael A. Sperling, Abraham Mathews, William R. Reohr, Kavita Nair, Nianzheng Cao

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 1 MB Cache Subsystem Prototype With 1.8 ns Embedded DRAMs in 45 nm SOI CMOS.

Peter J. Klim, John Barth, William R. Reohr, David Dick, Gregory Fredeman, Gary Koch, Hien M. Le, Aditya Khargonekar, Pamela Wilcox, John Golz, Jente B. Kuang, Abraham Mathews, Jethro C. Law, Trong Luong, Hung C. Ngo, Ryan Freese, Hillery C. Hunter, Erik Nelson, Paul C. Parries, Toshiaki Kirihata, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2009

Statistical yield analysis of silicon-on-insulator embedded DRAM.

Rouwaida Kanj, Rajiv V. Joshi, Jente B. Kuang, J. Kim, Mesut Meterelliyoz, William R. Reohr, Sani R. Nassif, Kevin J. Nowka

Proceedings of the 10th International Symposium on Quality of Electronic Design (ISQED 2009), 2009

2008

Rethinking Refresh: Increasing Availability and Reducing Power in DRAM for Cache Applications.

Philip G. Emma, William R. Reohr, Mesut Meterelliyoz

IEEE Micro, 2008

A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier.

John Barth, William R. Reohr, Paul C. Parries, Gregory Fredeman, John Golz, Stanley Schuster, Richard E. Matick, Hillery C. Hunter, Charles Tanner, Joseph Harig, Hoki Kim, Babar A. Khan, John Griesemer, Robert Havreluk, Kenji Yanagisawa, Toshiaki Kirihata, Subramanian S. Iyer

IEEE J. Solid State Circuits, 2008

An on-chip dual supply charge pump system for 45nm PD SOI eDRAM.

Jente B. Kuang, Abraham Mathews, John Barth, Fadi H. Gebara, Tuyet Nguyen, Jeremy D. Schaub, Kevin J. Nowka, Gary D. Carpenter, Don Plass, Erik Nelson, Ivan Vo, William R. Reohr, Toshiaki Kirihata

Proceedings of the ESSCIRC 2008, 2008

2007

A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier.

John Barth, William R. Reohr, Paul C. Parries, Gregory Fredeman, John Golz, Stanley Schuster, Richard E. Matick, Hillery C. Hunter, Charles Tanner, Joseph Harig, Hoki Kim, Babar A. Khan, John Griesemer, Robert Havreluk, Kenji Yanagisawa, Toshiaki Kirihata, Subramanian S. Iyer

Proceedings of the 2007 IEEE International Solid-State Circuits Conference, 2007

2006

Memories: Exploiting Them and Developing Them.

William R. Reohr

Proceedings of the 2006 IEEE International SOC Conference, Austin, Texas, USA, 2006

2004

A high-speed 128-kb MRAM core for future universal memory applications.

John K. DeBrosse, Dietmar Gogl, Alexander Bette, Heinz Hoenigschmid, Raphael Robertazzi, Christian Arndt, Daniel Braun, D. Casarotto, Robert Havreluk, Stefan Lammers, Werner Obermaier, William R. Reohr, Hans Viehmann, William J. Gallagher, Gerhard Müller

IEEE J. Solid State Circuits, 2004

1993

Design SRAMs for burn-in.

William R. Reohr, Yuen H. Chan, Donald W. Plass, Antonio Pelella, Philip T. Wu

Proceedings of the 11th IEEE VLSI Test Symposium (VTS'93), 1993