71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure.

[BibT_eX]

[DOI]

Min Zhou

Hong Zhou

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., February, 2023

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on Integrated Circuits, 2023

A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology.

[BibT_eX]

[DOI]

Proceedings of the 12th International Conference on Networks, Communication and Computing, 2023

2022

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits.

[BibT_eX]

[DOI]

IEEE Trans. Instrum. Meas., 2022

Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber.

[BibT_eX]

[DOI]

CoRR, 2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2022

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications.

[BibT_eX]

[DOI]

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.

[BibT_eX]

[DOI]

Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021

Recent progress of integrated circuits and optoelectronic chips.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2021

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.

[BibT_eX]

[DOI]

Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2020

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.

[BibT_eX]

[DOI]

IEEE Access, 2020

Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

A novel graphical method for dual-frequency two sections transformer.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2016

2015

A 5-8 GHz wideband 100 W internally matched GaN power amplifier.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2015

The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2015

2014

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp.

[BibT_eX]

[DOI]

Sci. China Inf. Sci., 2014

2005

Analysis of the Effect of LUT Size on FPGA Area and Delay Using Theoretical Derivations.

[BibT_eX]

[DOI]

Proceedings of the 6th International Symposium on Quality of Electronic Design (ISQED 2005), 2005

Testing for Resistive Shorts in FPGA Interconnects.

[BibT_eX]

[DOI]

Proceedings of the 6th International Symposium on Quality of Electronic Design (ISQED 2005), 2005

Xiaohua Ma

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